The temperature range of [Formula: see text] = 77–770 K in the system alloys: Holl coefficient [Formula: see text], thermo-emf [Formula: see text], electric conductivity [Formula: see text], measured [Formula: see text]-density of components and analyzed. It has been established that samarium additive atoms contain donor-type properties and the effectiveness increases with the temperature increase: up to 40% proportional to [Formula: see text] K in [Formula: see text]-type specimens, whereas in [Formula: see text]-type samples this increase is higher and covers the contents of pH varying from [Formula: see text] to [Formula: see text]. An electrical conductivity of compounds increased due to the carrier activation with further increase of temperature. The activation energy of carriers at low temperatures ([Formula: see text] K) is [Formula: see text] eV for [Formula: see text] mol.% and [Formula: see text] mol.% compounds at [Formula: see text] = 77–320 K and for [Formula: see text] mol.% and [Formula: see text] mol.% compounds are [Formula: see text] eV. [Formula: see text] const at [Formula: see text]–400 K for [Formula: see text] mol.% and [Formula: see text] mol.% compounds, and passing with minimum increases at [Formula: see text] = 400–500 K.
The paper presents the results of studies into physical-chemical and electrophysical properties of alloys of the (2Bi 2 O 3 ·B 2 O 3 ) 100-x -(2 Bi 2 O 3 ·3GeO 2 ) x system. Frequency dependences of electrical impedance (R), dielectric permittivity (ε') and dielectric losses (tg σ) in alternating current and different temperatures were studied. It found that in samples the conductivity is mainly hopping conductivity with lengths varied between localized states.
The 3Bi 2 O 3 ·5B 2 O 3 -Nd 2 O 3 ·3B 2 O 3 system was studied using DTA, XRD, and electrical conductivity and heat properties measured. A new ternary compound was revealed in the system. Formation of a new compound expands an area of glass formation towards non-glass forming boundary binary compounds. It found that obtained materials possess semiconductor properties as distinct from initial 3Bi 2 O 3 ·5B 2 O 3 , Nd 2 O 3 ·3B 2 O 3
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