Some Measurements connected with Carrier Deficit Phenomena in Germanium

Many, A.; Gerlich, D.; Harnik, E.

doi:10.1088/0370-1301/68/11/423

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1992

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On the theory of carrier exclusion in “pure” intrinsic semiconductors

Aronov

Mamatkulov

Rubinov

1981

Phys. Stat. Sol. (a)

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Theoretical results are given concerning exclusion in intrinsic semiconductors with non‐injecting contacts under the conditions where the intrinsic concentration of charge carriers exceeds by far the impurity carrier concentration. Unlike other works, this paper considers exclusion not at low but a t high level of free carrier depletion in the basic semiconductors. The concentration of carriers of both types near contacts as functions of current, distribution of carrier concentrations and field in a crystal, current and voltage dependences of the depletion region width, current‐voltage characteristic, and specific values of voltage in its various regions, and their dependences on the intensity of “intrinsic” light and temperature are studied. Good agreement is shown between the theoretical and experimental results for “high‐purity” intrinsic germanium.

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