7. Electrical Properties

doi:10.1016/s0076-695x(08)60465-2

Methods in Experimental Physics

1959

DOI: 10.1016/s0076-695x(08)60465-2

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7. Electrical Properties

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2018

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Single Electron Transistor Scheme Based on Multiple Quantum Dot Islands: Carbon Nanotube and Fullerene

Khademhosseini

Dideban

Ahmadi

et al. 2018

ECS J. Solid State Sci. Technol.

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H. (2018) Single electron transistor scheme based on multiple quantum dot islands: carbon nanotube and fullerene. Abstract 17 Single electron transistor (SET) is a nano dimension device that is offered by technology to 18 solve the problem of aggressive scaling in traditional transistors. Its operation speed depends 19 on carrier mobility of its quantum dot. In this research, fullerene (C 60 ) and carbon nanotube 20 (CNT) are utilized as materials of quantum dots in SET. Two SETs with different multiple 21 quantum dots as C 60 -CNT-C 60 and CNT-C 60 -CNT are modeled and analyzed. The 22 comparison study shows that total length of quantum dots as fullerene diameter and CNT 23 length have indirect effect on its current. Moreover increasing temperature decreases its 24 current while rising of the gate voltage increases its current. In other words, quantum dot 25 length, temperature and gate voltage are parameters which can control SET operation. 26 Furthermore two SETs are simulated and their stability diagrams are analyzed. The 27 simulation results show that C 60 -CNT-C 60 SET has lower coulomb blockade and also it has 28 more reliability and faster operation than CNT-C 60 -CNT SET.29

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Single Electron Transistor Scheme Based on Multiple Quantum Dot Islands: Carbon Nanotube and Fullerene

Khademhosseini

Dideban

Ahmadi

et al. 2018

ECS J. Solid State Sci. Technol.

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show abstract

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7. Electrical Properties

Cited by 1 publication

References 287 publications

Single Electron Transistor Scheme Based on Multiple Quantum Dot Islands: Carbon Nanotube and Fullerene

Single Electron Transistor Scheme Based on Multiple Quantum Dot Islands: Carbon Nanotube and Fullerene

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