Single Electron Transistor Scheme Based on Multiple Quantum Dot Islands: Carbon Nanotube and Fullerene

Abstract

H. (2018) Single electron transistor scheme based on multiple quantum dot islands: carbon nanotube and fullerene. Abstract 17 Single electron transistor (SET) is a nano dimension device that is offered by technology to 18 solve the problem of aggressive scaling in traditional transistors. Its operation speed depends 19 on carrier mobility of its quantum dot. In this research, fullerene (C 60 ) and carbon nanotube 20 (CNT) are utilized as materials of quantum dots in SET. Two SETs with different multiple 21 quantum dots as C 60 -CNT-C 60 and CNT-C 60 -CNT are modeled and analyzed. The 22 comparison study shows that total length of quantum dots as fullerene diameter and CNT 23 length have indirect effect on its current. Moreover increasing temperature decreases its 24 current while rising of the gate voltage increases its current. In other words, quantum dot 25 length, temperature and gate voltage are parameters which can control SET operation. 26 Furthermore two SETs are simulated and their stability diagrams are analyzed. The 27 simulation results show that C 60 -CNT-C 60 SET has lower coulomb blockade and also it has 28 more reliability and faster operation than CNT-C 60 -CNT SET.29

Impact of Hydrogen Adsorption on the Performance of a Single Electron Transistor Utilizing Fullerene Quantum Dots

“…Thus fullerene as a zero dimension material with high electron mobility and high stability in nanoscale is selected for the SET island. 24,25 Furthermore utilizing fullerene as SET island presents lower leakage current and coulomb blockade range than SET with silicon island. 26 In this research, we proposed the idea of selecting fullerene as the quantum dot material of SET when different numbers of hydrogen atoms are added to fullerene molecule as used in other work.…”

Coupled NEGF-PSO method for maximizing the current ratio of CNTFETs based on oxide thickness optimization

“…Until a self-consistent potential is acquired, the steps of solving the 2D Poisson equations and coupled NEGF must be repeated. By means of the Landauer-Buttiker formula, the drain current for coherent transport under a bias voltage V can be calculated after the once self-consistency is achieved [21,22,23]:…”

Graphene Structures-Based 2D Nanotransistors (Review)

“…The theory of correlated tunneling for a tunneling system, where the Coulomb interaction of electrons is manifested, was developed in the 1970s (see, for example, [82]). Several FET structures based on single-electron tunneling, which are called singleelectron transistors (SETs) have been theoretically proposed and implemented in [82][83][84][85][86][87][88][89][90][91][92].…”