A gas-liquid phase sol-gel process was proposed to reinforce a poly(dimethyl siloxane) (PDMS) mold with high aspect ratio microstructures (HARMs) for micromolding. Unlike the conventional sol-gel process or in situ precipitation of silicate nanoparticles (SiO 2 ) inside the PDMS network, the vapor of water and aminomethyl propanol-95 permeated through the PDMS which was pre-soaked with tetraethoxy silane (TEOS), leading to the occurrence of hydrolysis and condensation and reinforcement of the PDMS. The reinforced PDMS mold with HARMs was used for micromolding, and high replication accuracy was achieved. The proposed technique not only prevents the surface of microstructures on the mold from potential agglomeration of particles but also allows for the repetitive usage of the silicon mother mold without damage.
The characterization and fabrication of Schottky diodes based on Hg 1−x Cd x Te for x ≈ 0.2 are presented. In order to reduce or eliminate Fermi level pinning a passivation dielectric layer was specially grown on the metal-semiconductor interface. Its thickness had to be reduced to allow for free carrier tunnelling. Dielectric layers composed of native oxides, native fluorides, SiO 2 or Al 2 O 3 were investigated. Interface trap density of less than 3 × 10 11 cm −2 eV −1 and interfacial layer charges of less than 1 × 10 11 cm −2 were obtained. Diode characterization was performed by analysing I/V characteristics. The barrier heights for different metals, penetration coefficient for free carrier tunnelling through the dielectric potential barrier and diode ideality factor for different dielectric layer thicknesses were estimated. The barrier height showed pronounced dependence on the metal applied. The best results for an ideality factor of 1.5 were achieved with the Schottky diode samples passivated with native fluoride, the values for other dielectrics being smaller than 3. High values for diode differential resistance were obtained.
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