Some Circuit Design Techniques for Linear Integrated Circuits

Widlar, Robert J.

doi:10.1109/tct.1965.1082512

Cited by 74 publications

(12 citation statements)

References 2 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…One of the most popular implementations for such reference currents is the familiar bootstrapped current reference attributed to Widlar [6] and first reported in CMOS by Vittoz and Fellrath [5]. Fig.…”

Section: Classic Self-biased Current Ref-erencementioning

confidence: 99%

A Low-Voltage Current Reference with High Immunity to EMI

Cordova

Toledo

Fabris

2014

Proceedings of the 27th Symposium on Integrated Circuits and Systems Design

View full text Add to dashboard Cite

An electromagnetic interference (EMI) source can significantly degrade the performance of a current reference since its finite Power Supply Rejection Ratio (PSRR) of the later. For that reason A modified current reference with high immunity to EMI and a new current mirror structure insensitive to induced EMI are proposed based on the classic bootstrapped current and compared to other current reference structures. Simulations results using XFAB 0.18 μm CMOS process demonstrate the high immunity to EMI of the proposed current reference. Improvements in the PSRR of 48dB and 32dB in comparison to the classical version and other implementations respectively.

show abstract

Section: Classic Self-biased Current Ref-erencementioning

confidence: 99%

A Low-Voltage Current Reference with High Immunity to EMI

Cordova

Toledo

Fabris

2014

Proceedings of the 27th Symposium on Integrated Circuits and Systems Design

View full text Add to dashboard Cite

show abstract

“…A traditional approach to the PTAT current mirror design is the underlying Widlar current mirror (CM) circuit architecture in which output current gain variation with temperature can be controlled by choosing an emitter degeneration resistance nominal in the mirroring current branch [16]. Depending on the element transistor properties and the essence of the power supply (biasing current or voltage) for the CM circuit, the skew of the output temperature-current characteristic may exhibit nonlinearities at different sections.…”

Section: General Ptat Definitionmentioning

confidence: 99%

Analytical Approach to Design of Proportional-to-the-Absolute-Temperature Current Sources and Temperature Sensors Based on Heterojunction Bipolar Transistors

Golovins

Sinha

2013

IEEE Trans. Compon., Packag. Manufact. Technol.

View full text Add to dashboard Cite

“…The master current I m is generated by the familiar bootstrapped current reference attributed to Widler [8,9] and first reported in CMOS by Vittoz and Fellrath [10] (see also textbooks such as [1,[11][12][13]). Transistors M n1 and M n2 have a gain ratio (W n1 /L n1 )/(W n2 /L n2 ) = M. Since the currents in the two branches are forced to be the same by the mirror M p1 -M p2 , the ratio in current density in the M n 's sets up a difference in their gate-source voltage, which is expressed across the load R. Resistance R and ratio M determine the current.…”

Section: The Master Biasmentioning

confidence: 99%

Bias Current Generators with Wide Dynamic Range

Delbrück

Schaik

2005

Analog Integr Circ Sig Process

View full text Add to dashboard Cite

Mixed-signal or analog chips often require a wide range of biasing currents that are independent of process and supply voltage and that are proportional to absolute temperature. This paper describes CMOS circuits that we use to generate a set of fixed bias currents typically spanning six decades at room temperature down to a few times the transistor off-current. A bootstrapped current reference with a new startup and powercontrol mechanism generates a master current, which is successively divided by a current splitter to generate the desired reference currents. These references are nondestructively copied to form the chip's biases. Measurements of behavior, including temperature effects from 1.6 and 0.35 µ implementations, are presented and nonidealities are investigated. Temperature dependence of the transistor off-current is investigated because it determines the lower limit for generated currents. Readers are directed to a design kit that allows easy generation of the complete layout for a bias generator with a set of desired currents for scalable MOSIS CMOS processes.

show abstract

Some Circuit Design Techniques for Linear Integrated Circuits

Cited by 74 publications

References 2 publications

A Low-Voltage Current Reference with High Immunity to EMI

A Low-Voltage Current Reference with High Immunity to EMI

Analytical Approach to Design of Proportional-to-the-Absolute-Temperature Current Sources and Temperature Sensors Based on Heterojunction Bipolar Transistors

Bias Current Generators with Wide Dynamic Range

Contact Info

Product

Resources

About