2013
DOI: 10.1109/tcpmt.2012.2226886
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Analytical Approach to Design of Proportional-to-the-Absolute-Temperature Current Sources and Temperature Sensors Based on Heterojunction Bipolar Transistors

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Cited by 4 publications
(2 citation statements)
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“…Integrated temperature sensors can be achieved in many different ways, e.g., as p-n diodes [5], oscillators [6], bipolar transistors [7], or proportional to absolute temperature (PTAT) sensors [8][9][10][11][12][13]. According to the amount of dissipated, one could distinguish also low-power temperature sensors [14][15][16].…”
Section: Introductionmentioning
confidence: 99%
“…Integrated temperature sensors can be achieved in many different ways, e.g., as p-n diodes [5], oscillators [6], bipolar transistors [7], or proportional to absolute temperature (PTAT) sensors [8][9][10][11][12][13]. According to the amount of dissipated, one could distinguish also low-power temperature sensors [14][15][16].…”
Section: Introductionmentioning
confidence: 99%
“…Both bipolar and metal–oxide semiconductor (MOS) transistors are generally used to implement on‐chip sensors, e.g. temperature sensors [4]. In the bipolar transistors, the base‐emitter voltage and the saturation current are used for extraction of the basic signals.…”
Section: Introductionmentioning
confidence: 99%