Solution processed thin film transistor from liquid phase exfoliated MoS2 flakes

Zeng, Xiaoling; Hirwa, Hippolyte; Metel, Sonia; Nicolosi, Valeria; Wagner, Veit

doi:10.1016/j.sse.2017.12.005

Cited by 24 publications

(21 citation statements)

References 25 publications

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“…512 ± 12 meV and 360 ± 10 meV, respectively. EA of hundreds of meV reflect the energy necessary to overcome the inter-flake barriers in MoS2 systems 26 , rather than low-energy (tens of meV) intra-flake conduction states 26 . By sweeping VG Back from -60 to +60 V, the T-dependent charge carrier mobility µ(T) of films and networks follows an Arrhenius relation, with lower EA for networks (Supplementary Fig.…”

Section: Temperature-dependent Electrical Characteristicsmentioning

confidence: 99%

“…In the case of electronic applications based on individual flakes, a promising strategy exploits thiolated molecular systems to heal sulfur vacancies (VS) in transition metal disulfides (MS2), thereby restoring the material pristine crystal structure and enhancing its electrical properties 23,24 . Nevertheless, in thin-film TMD-based devices, an additional and limiting factor related to the inter-flake electrical resistance emerges, resulting in a significant hindrance of charge carrier transport 25,26 . This represents a major bottleneck in the development of solution-processed TMD-based optoelectronics, especially in large-area and high-performance device applications.…”

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confidence: 99%

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Covalently interconnected transition metal dichalcogenide networks via defect engineering for high-performance electronic devices

et al. 2021

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Solution-processed semiconducting transition metal dichalcogenides (TMDs) are at the centre of an ever-increasing research effort in printed (opto)electronics. However, device performance is limited by structural defects resulting from the exfoliation process and poor inter-flake electronic connectivity.Here, we report a new molecular strategy to boost the electrical performance of TMD-based devices via the use of dithiolated conjugated molecules, to simultaneously heal sulfur vacancies in solutionprocessed transition metal disulfides (MS2) and covalently bridge adjacent flakes, thereby promoting percolation pathways for the charge transport. We achieve a reproducible increase by one order-ofmagnitude in field-effect mobility (µFE), current ratios (ION / IOFF), and switching times (τS) of liquid-gated transistors, reaching 10 -2 cm 2 V -1 s -1 , 10 4 , and 18 ms, respectively. Our functionalization strategy is an universal route to simultaneously enhance the electronic connectivity in MS2 networks and tailor on demand their physicochemical properties according to the envisioned applications.

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Section: Temperature-dependent Electrical Characteristicsmentioning

confidence: 99%

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confidence: 99%

Covalently interconnected transition metal dichalcogenide networks via defect engineering for high-performance electronic devices

et al. 2021

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“…201 To enhance exibility, polymer encapsulation has been used in MoS 2 -based FETs. 203,204 The additional polymer layer induces mechanical strain at the interface that contributes to reducing the surface adsorbates and gaining contact areas. In addition to the encapsulation, researchers have developed several novel device geometries to inhibit the defects.…”

Section: Thin Lm Transistors (Tfts)mentioning

confidence: 99%

Flexible electronics based on 2D transition metal dichalcogenides

et al. 2022

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“…The carrier mobility of TFTs made by this method is 0.4 cm 2 V −1 s −1 . In another work, MoS 2 from a two-step liquid-phase exfoliation (LPE) method was sprayed onto the substrates as channels in TFTs [55]. The carrier mobility of this TFT was 10 −4 cm 2 V −1 s −1 , a relatively low value.…”

Section: Tftsmentioning

confidence: 99%

Electronic and optoelectronic applications of solution-processed two-dimensional materials

Wang

Liu

2019

Science and Technology of Advanced Materials

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The isolation of graphene in 2004 has initiated much interest in two-dimensional (2D) materials. With decades of development, solution processing of 2D materials has becoming very promising due to its large-scale production capability, and it is therefore necessary to examine progress on solution-processed 2D materials and their applications. In this review, we highlight recent advances in the assembly of solution-processed 2D materials into thin films and the use of them for electronics and optoelectronics. We first present an overview about typical approaches to assemble solution-processed 2D materials into desired structures, including layer-by-layer assembly, Langmuir–Blodgett assembly, spin coating, electrophoretic deposition, inkjet printing, and vacuum filtration. Then, electronic and optoelectronic applications of such assembly films are presented, such as thin-film transistors, transparent conductive films, mechanical and chemical sensors, photodetectors and optoelectronic devices, as well as flexible and printed electronics. Finally, our perspectives on challenges and future opportunities in this important field are proposed.

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Solution processed thin film transistor from liquid phase exfoliated MoS2 flakes

Cited by 24 publications

References 25 publications

Covalently interconnected transition metal dichalcogenide networks via defect engineering for high-performance electronic devices

Covalently interconnected transition metal dichalcogenide networks via defect engineering for high-performance electronic devices

Flexible electronics based on 2D transition metal dichalcogenides

Electronic and optoelectronic applications of solution-processed two-dimensional materials

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