A novel and simple chemical method was developed to fastly synthesize Au nanoplates with size of micrometers and tens of nanometers in thickness. The synthesis was carried out within 30 minutes by thermal reduction of precursors (HAuCl 4 ) in the presence of binary surfactants Poly(vinylpyrrolidone) (PVP) and cetyltrimethylammonium bromide (CTAB) in ethylene glycol (EG) solution. The presence and concentration of PVP and CTAB in the growth solution play important roles in the fast formation of Au nanoplates. The obtained Au nanoplates exhibit strong surface plasmon absorption in the near-infrared region (NIR), displaying a considerable dependence on the shape and size. Characterizations by Transmission electron microscope and X-ray diffraction indicated that the nanoplates are single crystals with (111) planes as two basal surfaces. Explanations for the nuclei formation and crystal growth behind anisotropic Au nanoplates were proposed.
A large lateral size and low dimensions are prerequisites for next generation electronics. Since the first single layer MoS transistor reported by Kis's group in 2011, layered transition metal dichalcogenides (TMDs) have been demonstrated to be the ideal candidate for next generation electronics. However, the development of large scale and low cost growth techniques is a crucial step towards TMDs' inclusion in modern electronics and photoelectronics. In this work we develop a cheap, wet chemical, and environment friendly deposition process for two dimensional MoS flakes with extended size. For our deposition process, ammonium tetrathiomolybdate (ATTM) dissolved in deionized water was used as precursor solution and was deposited on a SiO/Si substrate through a Langmuir-Blodgett like deposition process. To our knowledge, this is the first time MoS flakes have been grown in an aqueous solution. Large-sized MoS flakes exceeding 150 μm in lateral size were obtained after thermal decomposition. Thicknesses ranging from a monolayer to 5 monolayers were confirmed by AFM and Raman spectroscopy. Further investigations revealed that the quality of the produced flakes strongly depends on the post growth thermal treatment and its atmosphere. This simple and nontoxic deposition method is suitable for the preparation of large (hybrid) transition metal dichalcogenide nanostructures for applications in next generation electronics.
Cr-doped ZnS (molar Cr:(Cr + Zn) between 0.51% and 19.69%) nanocrystallites have been prepared through co-precipitation method. The x-ray diffraction, transmission electron microscopy, and selected area electron diffraction results show that all the samples are in sphalerite structure with average particle size about 3 nm. No impurity phase relating to Cr element is found in all the samples. X-ray photoelectron spectroscopy spectra reveal that Cr was incorporated into ZnS lattice as Cr3+. It can be seen in the UV-visible absorption spectra that, besides the intrinsic band-gap absorption of ZnS below 370 nm, there are another two absorption bands (at 425 nm and 595 nm, respectively) in the visible light range, which are the characteristic bands of Cr3+. Photoluminescence spectroscopy was also used to characterize corresponding luminescence properties of the nanocrystallites. The band-edge emission in photoluminescence spectroscopy exhibits blue-shift as the concentration of Cr increases, and several emission peaks concerned with surface states and zinc vacancies were found in the wavelength range of 400 nm ∼ 500 nm. It is confirmed that Cr doping will bring about a considerable amount of zinc vacancies. Magnetic measurements indicated that all the samples are paramagnetic and the calculated effective magnetic moments μeff of Cr3+ were close to the theoretical value of 3.87 μB. Accordingly, it seems that zinc vacancies give no contribution to the overall magnetic response of the samples.
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