“…There have been many reports on roomtemperature ferromagnetism for wide bandgap semiconductor doped with a few percent of 3d transition-metal ions. The host materials for the DMS have been ZnO [1,[4][5][6], ZnS [2,[7][8][9][10][11][12], TiO 2 [13,14], SnO 2 [15,16], GaAs [17], AlN [18], and GaN [19]. TM-doped DMS materials always suffer from problems such as formation of secondary phase and/or clusters [2].…”