Solution-processed oxide semiconductor SnO in p-channel thin-film transistors

Okamura, Koshi; Nasr, Babak; Brand, Richard A.; Hahn, Horst

doi:10.1039/c2jm16426d

Cited by 108 publications

(80 citation statements)

References 23 publications

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“…71 To date, only a few metal oxide semiconductors (e.g., SnO Cu 2 O have also been shown. 296 Additionally, devices based on solution-processed SnO 268 and Cu x O 291,293,297 have been presented. Besides SnO x and Cu x O, also NiO has been utilized to realize rigid p-type TFTs with modest carrier mobility.…”

Section: A P-type Metal Oxide Semiconductorsmentioning

confidence: 99%

Metal oxide semiconductor thin-film transistors for flexible electronics

Petti

Münzenrieder

Vogt

et al. 2016

Applied Physics Reviews

545

430

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Section: A P-type Metal Oxide Semiconductorsmentioning

confidence: 99%

Metal oxide semiconductor thin-film transistors for flexible electronics

Petti

Münzenrieder

Vogt

et al. 2016

Applied Physics Reviews

545

430

View full text Add to dashboard Cite

“…However, the electrical performances of p-type oxide TFTs are still inferior to those of n-type oxide TFTs, which has prevented the implementation of complementary logic-based circuits with oxide TFTs [1][2][3][4][5]. Tin monoxide (SnO) is one of the promising channel materials for the p-type oxide TFTs.…”

Section: Introductionmentioning

confidence: 99%

Effects of the active layers deposition temperature on the electrical performance of p-type SnO thin-film Transistors

Myeonghun

Kwon

Cho

et al. 2014

Journal of the Korean Physical Society

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We investigated the effects of the active layers deposition temperature on the electrical performance of p-type tin-oxide thin-film transistors (TFTs). Negligible currents flowed between the source and the drain electrodes in the devices with tin-oxide thin films deposited at 60 • C and 220 • C, but devices with tin-oxide thin films deposited at 100, 140, and 180 • C exhibited typical p-type characteristics. For deposition temperatures ranging from 100 to 180 • C, the field-effect mobility decreased and the turn-on voltage moved in the negative direction as the deposition temperature was increased, which was mainly attributed to a decrease in the grain size based on the grainboundary charge-trapping mechanism. Our experimental results show that it is very important to optimize the active layers deposition temperature to improve the electrical performance in p-type tin-oxide TFTs.

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“…Since the work from Ogo et al in 2008 [2], tin monoxide (SnO) has attracted special attention as a channel material of the p-type oxide TFT due to the possibility for high hole mobilities, and various research results have been reported about the SnO-based p-type oxide TFTs. Liang et al [3] investigated the effects of vacuum annealing on the electrical performance of SnO TFTs, and Okamura et al [4] reported the SnO TFT fabricated using the solution process. Recently, Frescas et al [5] tried to optimize the oxygen partial pressure and total pressure during the channel deposition by DC magnetron sputtering, and successfully demonstrated the record high mobility (~ 6.75 cm 2 /Vs) for p-type SnO TFTs on glass substrates.…”

Section: Introductionmentioning

confidence: 99%

“…Recently, Frescas et al [5] tried to optimize the oxygen partial pressure and total pressure during the channel deposition by DC magnetron sputtering, and successfully demonstrated the record high mobility (~ 6.75 cm 2 /Vs) for p-type SnO TFTs on glass substrates. Various dielectrics including Al 2 O x , thermal SiO 2 , and HfO 2 were used as gate insulators of SnO TFTs [2][3][4][5][6]. However, as of yet, no comparative report has been made on the effects of gate insulator in p-type SnO TFTs although the gate insulator can strongly affect the electrical performance of field-effect transistors including TFTs [7].…”

Section: Introductionmentioning

confidence: 99%

High Performance p-type SnO thin-film Transistor with SiO_xGate Insulator Deposited by Low-Temperature PECVD Method

Myeonghun¹,

Han²,

Song³

et al. 2014

JSTS:Journal of Semiconductor Technology and Science

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We have investigated the gate insulator effects on the electrical performance of p-type tin monoxide (SnO) thin-film transistors (TFTs). Various SnO TFTs are fabricated with different gate insulators of a thermal SiO 2 , a plasma-enhanced chemical vapor deposition (PECVD) SiN x , a 150 o Cdeposited PEVCD SiO x , and a 300 o C-deposited PECVD SiO x . Among the devices, the one with the 150 o C-deposited PEVCD SiO x exhibits the best electrical performance including a high field-effect mobility (=4.86 cm 2 /Vs), a small subthreshold swing (=0.7 V/decade), and a turn-on voltage around 0 (V). Based on the X-ray diffraction data and the localizedtrap-states model, the reduced carrier concentration and the increased carrier mobility due to the small grain size of the SnO thin-film are considered as possible mechanisms, resulting in its high electrical performance. Index Terms-P-type SnO TFTs, gate insulator, PECVD SiO x , localized-trap-states model M.S., and Ph.D. degrees in electrical

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Solution-processed oxide semiconductor SnO in p-channel thin-film transistors

Cited by 108 publications

References 23 publications

Metal oxide semiconductor thin-film transistors for flexible electronics

Metal oxide semiconductor thin-film transistors for flexible electronics

Effects of the active layers deposition temperature on the electrical performance of p-type SnO thin-film Transistors

High Performance p-type SnO thin-film Transistor with SiO_xGate Insulator Deposited by Low-Temperature PECVD Method

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Solution-processed oxide semiconductor SnO in p-channel thin-film transistors

Cited by 108 publications

References 23 publications

Metal oxide semiconductor thin-film transistors for flexible electronics

Metal oxide semiconductor thin-film transistors for flexible electronics

Effects of the active layers deposition temperature on the electrical performance of p-type SnO thin-film Transistors

High Performance p-type SnO thin-film Transistor with SiOxGate Insulator Deposited by Low-Temperature PECVD Method

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Product

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High Performance p-type SnO thin-film Transistor with SiO_xGate Insulator Deposited by Low-Temperature PECVD Method