Solid-phase epitaxy of amorphous silicon films by in situ postannealing using RPCVD

The curious case of thin-body Ge crystallization

“…In that body of work annealing at a very high temperature (e.g., 1325 C) cured defects, 27 which was also observed in Si by Skibitzki et al using a 1000 C 60 s anneal. 28 Such high thermal budget anneals almost certainly produce significant dopant diffusion. It is noteworthy in this work that a very modest thermal budget (600 C 1 s RTA) can produce the same curing effect in Ge.…”