Role of electrochemical process parameters on the electrodeposition of silicon from 1-butyl-1-methylpyrrolidinium bis(trifluoromethanesulfonyl)imide ionic liquid

Thomas, Steve; Kowalski, Damian; Molinari, Michaël; Mallet, Jérémy

doi:10.1016/j.electacta.2018.01.139

Cited by 14 publications

(6 citation statements)

References 45 publications

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“…This absence of impurities, possibly coming from the ionic liquid, has also been confirmed by X-ray photoelectron spectroscopy analysis (XPS; not shown here) performed on a bunch of nanowires and, thus, giving only average results compared to the mapping obtained by EDS. These purity of the silicon structures (thin films, NWs, nanograins) has also been confirmed by the work of our group or other groups , using secondary ion mass spectroscopy, XPS, or scanning tunneling microscopy.…”

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confidence: 79%

Strong Room-Temperature Visible Photoluminescence of Amorphous Si Nanowires Prepared by Electrodeposition in Ionic Liquids

et al. 2018

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Visible photoluminescence at room temperature is reported from the silicon nanowires prepared by electrodeposition in ionic liquids. Nanowires with diameters 110, 200, and 400 nm have been synthesized by a template-assisted electrodeposition using ionic liquid electrolytes. The obtained nanowires are amorphous in nature and possess robustness and good structural and compositional quality. The PL measurements at room temperature reveal a strong visible light emission from the 110 nm silicon nanowires. The strong and efficient red luminescence from the nanowires is found to be size-dependent and originates from the intrinsic radiative recombination and spatial confinement of carriers in the amorphous silicon nanowires with a thin surface oxide shell. The silicon nanowires with 110 nm diameter shows an exceptionally high quantum yield >25%. These light-emitting nanowires obtained through a simple alternative growth technique could find applications in future Si-based optoelectronic devices.

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confidence: 79%

Strong Room-Temperature Visible Photoluminescence of Amorphous Si Nanowires Prepared by Electrodeposition in Ionic Liquids

et al. 2018

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“…Thomas et al . [ 142 ] described the effects of potential, the concentration of electroactive substances, temperature, and organic additives on silicon deposits in 1-butyl-1-methylpyrrolidinium bis(trifluoromethanesulfonyl)imide ionic liquids. It was found that the concentration of electroactive substances or additives in the solvent has an almost negligible effect on the synthesis of silicon.…”

Section: State-of-the-art Silicon Electrochemical Extraction Strategi...mentioning

confidence: 99%

Recent Advances in Electrochemical-Based Silicon Production Technologies with Reduced Carbon Emission

2023

Research

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Sustainable and low-carbon-emission silicon production is currently one of the main focuses for the metallurgical and materials science communities. Electrochemistry, considered a promising strategy, has been explored to produce silicon due to prominent advantages: (a) high electricity utilization efficiency; (b) low-cost silica as a raw material; and (c) tunable morphologies and structures, including films, nanowires, and nanotubes. This review begins with a summary of early research on the extraction of silicon by electrochemistry. Emphasis has been placed on the electro-deoxidation and dissolution–electrodeposition of silica in chloride molten salts since the 21st century, including the basic reaction mechanisms, the fabrication of photoactive Si films for solar cells, the design and production of nano-Si and various silicon components for energy conversion, as well as storage applications. Besides, the feasibility of silicon electrodeposition in room-temperature ionic liquids and its unique opportunities are evaluated. On this basis, the challenges and future research directions for silicon electrochemical production strategies are proposed and discussed, which are essential to achieve large-scale sustainable production of silicon by electrochemistry.

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“… 8 − 10 Electrodeposition has always been identified as a potential alternative route for preparing Si because of its simple equipment, low cost, and relatively clean operation. 11 In recent years, the electrodeposition of Si has been achieved using organic solvents, 12 , 13 high-temperature molten salts, 14 , 15 and ionic liquids (ILs) 16 , 17 as a solution system to dissolve silicon sources. However, excessively high (>700 °C) temperatures are required for electrodeposition to yield crystalline Si.…”

Section: Introductionmentioning

confidence: 99%

“…Thus, it is extremely attractive to develop and utilize the byproduct silicon tetrachloride produced by the preparation of crystalline silicon in the industry for the re-preparation of crystalline silicon for implementing sustainable and green development. − Electrodeposition has always been identified as a potential alternative route for preparing Si because of its simple equipment, low cost, and relatively clean operation . In recent years, the electrodeposition of Si has been achieved using organic solvents, , high-temperature molten salts, , and ionic liquids (ILs) , as a solution system to dissolve silicon sources. However, excessively high (>700 °C) temperatures are required for electrodeposition to yield crystalline Si. , Conventional electrodeposition of Si at solid electrodes cannot direct yield crystalline silicon at low temperatures, which still requires subsequent annealing and purification processes to transform it into the crystalline state .…”

Section: Introductionmentioning

confidence: 99%

Preparation and Characterization of Crystalline Silicon by Electrochemical Liquid–Liquid–Solid Crystal Growth in Ionic Liquid

Zhao

Yang

et al. 2021

ACS Omega

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The electrodeposition at low temperature for the direct growth of crystalline thin films without any templating agent in ionic liquid (IL) is a relatively new electrochemical synthetic strategy. This work studied the role of the deposition temperature, deposition time, and different working electrodes in the electrodeposition of crystalline Si thin films from the byproduct silicon tetrachloride in IL at low temperature. X-ray diffraction (XRD) revealed that the as-deposited Si films were crystalline at the temperature of 80 °C. Scanning electron microscopy (SEM) and Raman spectroscopy further indicated that the crystalline quality of the as-deposited silicon film was relatively the best when the electrodeposition time reached 1 h at the temperature of 100 °C; excessive electrodeposition would yield amorphous silicon on the surface of the as-deposit crystalline Si, which decreased the crystal quality of the Si film. The SEM and XRD, respectively, revealed that the crystal structure of Si yielded on e-InGa was significantly different from that produced on Ga and more impurities existed in the film. Research on the influence of these parameters on crystallinity and morphological characteristics of Si gives better control over the growth of crystalline Si thin films for specific applications.

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Role of electrochemical process parameters on the electrodeposition of silicon from 1-butyl-1-methylpyrrolidinium bis(trifluoromethanesulfonyl)imide ionic liquid

Cited by 14 publications

References 45 publications

Strong Room-Temperature Visible Photoluminescence of Amorphous Si Nanowires Prepared by Electrodeposition in Ionic Liquids

Strong Room-Temperature Visible Photoluminescence of Amorphous Si Nanowires Prepared by Electrodeposition in Ionic Liquids

Recent Advances in Electrochemical-Based Silicon Production Technologies with Reduced Carbon Emission

Preparation and Characterization of Crystalline Silicon by Electrochemical Liquid–Liquid–Solid Crystal Growth in Ionic Liquid

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