Solid-phase epitaxy of undoped amorphous silicon by in-situ postannealing

Skibitzki, Oliver; Yamamoto, Yuji; Schubert, Markus Andreas; Tillack, Bernd

doi:10.1016/j.tsf.2011.10.100

Cited by 2 publications

(1 citation statement)

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“…Solid phase epitaxy (SPE) of thin amorphous silicon films on crystalline or polycrystalline substrates is a common technology in transistor fabrication on monocrystalline substrates [1,2,3]. It was also shown, that SPE is suitable for producing crystalline silicon thin film solar cells based on a polycrystalline seed layer prepared by aluminum-induced crystallization [4,5] or by diode laser crystallization [6].…”

Section: Introductionmentioning

confidence: 99%

TEM analysis of Si thin films prepared by diode laser induced solid phase epitaxy at high temperatures

2014

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The solid phase crystallization of amorphous silicon thin films deposited on <111>-oriented wafers at high temperatures was investigated. The films were heated up by diode laser irradiation for some milliseconds to seconds. Time resolved reflectivity measurements together with numerical temperature calculations showed that temperatures above 1000°C were reached before significant crystallization took place. By comparing two different laser intensities it is shown that random nucleation and growth dominate solid phase epitaxy if high temperatures are reached faster. The interface between epitaxially grown and randomly crystallized material is very rough which can be attributed to contaminations found at the substrate-film interface.

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