Solar-blind UV region and UV detector development objectives

Schreiber, Paul; Dang, Tuoc; Pickenpaugh, Thad; Smith, Gary A.; Gehred, Paul; Litton, C. W.

doi:10.1117/12.344560

Cited by 81 publications

(29 citation statements)

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“…These promising properties have inspired the use of III-nitride semiconductors for many applications such as light-emitting diodes, laser diodes, photodetectors, high electron mobility transistors, field-effect transistors, Schottky diodes, and solar cells [1][2][3][4][5]. Among these applications, ultraviolet (UV) photodetectors that are usable in visible-to solar-blind conditions have drawn significant attention for use in missile plume detection, flame engine sensors, ozone layer monitoring, and secure intersatellite communication systems [6,7]. With a bandgap between those of GaN (3.4 eV) and AlN (6.2 eV) [8], AlGaN can be used in both visible-and solar-blind UV photodetectors without bulky filter systems or heavy cooling systems such as those required for Si-based photodetectors, thus reducing the footprint and the production cost of the devices [7].…”

Section: Introductionmentioning

confidence: 99%

AlGaN Ultraviolet Metal–Semiconductor–Metal Photodetectors with Reduced Graphene Oxide Contacts

Pandit

Cho

2018

Applied Sciences

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AlGaN semiconductors are promising materials in the field of ultraviolet (UV) detection. We fabricated AlGaN/GaN UV metal–semiconductor–metal (MSM) photodiodes with two back-to-back interdigitated finger electrodes comprising reduced graphene oxide (rGO). The rGO showed high transparency below the wavelength of 380 nm, which is necessary for a visible-blind photodetector, and showed outstanding Schottky behavior on AlGaN. As the photocurrent, dark current, photoresponsivity, detectivity, and cut-off wavelength were investigated with the rGO/AlGaN MSM photodiodes with various Al mole fractions, systematic variations in the device characteristics with the Al mole fraction were confirmed, proving the potential utility of the device architecture combining two-dimensional materials, rGO, and nitride semiconductors.

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Section: Introductionmentioning

confidence: 99%

AlGaN Ultraviolet Metal–Semiconductor–Metal Photodetectors with Reduced Graphene Oxide Contacts

Pandit

Cho

2018

Applied Sciences

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“…Ultraviolet radiated by corona is also used to detect corona. Because of the solar blind band exists, UV in 220-280nm is rectangular distribution in atmosphere 4,5,6,7 . The lights from corona have this kind of UV light.…”

Section: Corona Detection Methodsmentioning

confidence: 99%

Using real-time embedded system with multiple DSPs in corona detection

Feng

Wang

et al. 2006

SPIE Proceedings

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The method how to detect and locate corona real-time by double spectrums image, UV spectrum image and visible spectrum image of the object, was introduced. And the construction of an embedded system on which the double spectrums detection method can be realized was also introduced. CCD cameras' control data and their output image data were processed respectively. Using this kind of system, we can find the corona real-time by a combined image, thus where the electric leakage is can be found quickly. Experiments indicate this method and the embedded system with multiple DSPs suits for corona detection.

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“…For solar-blind UV absorption the cut-off wavelength should be below 280 nm (4.5 eV) [1][2][3] corresponding to a significantly larger bandgap than that of ZnO (3.37 eV). Alloying ZnO with MgO, which is reasonably traditional, leads to the ternary compound MgZnO [4,5] with tunable bandgap up to 4.55 eV in wurtzite phase [6].…”

Section: Introductionmentioning

confidence: 99%

Nondestructive atomic compositional analysis of BeMgZnO quaternary alloys using ion beam analytical techniques

Zolnai

Toporkov

Volk

et al. 2015

Applied Surface Science

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HighlightsBeMgZnO thin layers were grown with plasma assisted molecular beam epitaxy (MBE)The Be contents were accurately measured with RBS and proton elastic backscattering The Tauc bandgap was measured from optical transmittance experiments The bandgap has been varied between 3.26 eV and 4.62 eV via the Be and Mg content Experimental and density functional theory calculated bandgaps were in good agreement AbstractThe atomic composition with less than 1-2 atom % uncertainty was measured in ternary BeZnO and quaternary BeMgZnO alloys using a combination of nondestructive Rutherford backscattering spectrometry with 1 MeV He + analyzing ion beam and nonRutherford elastic backscattering experiments with 2.53 MeV energy protons. An enhancement factor of 60 in the cross-section of Be for protons has been achieved to monitor Be atomic concentrations. Usually the quantitative analysis of BeZnO and BeMgZnO systems is challenging due to difficulties with appropriate experimental tools for the detection of the light Be element with satisfactory accuracy. As it is shown, our applied ion beam technique, Page 2 of 22A c c e p t e d M a n u s c r i p t supported with the detailed simulation of ion stopping, backscattering, and detection processes allows of quantitative depth profiling and compositional analysis of wurtzite BeZnO/ZnO/sapphire and BeMgZnO/ZnO/sapphire layer structures with low uncertainty for both Be and Mg. In addition, the excitonic bandgaps of the layers were deduced from optical transmittance measurements. To augment the measured compositions and bandgaps of BeO and MgO co-alloyed ZnO layers, hybrid density functional bandgap calculations were performed with varying the Be and Mg contents. The theoretical vs. experimental bandgaps show linear correlation in the entire bandgap range studied from 3.26 eV to 4.62 eV. The analytical method employed should help facilitate bandgap engineering for potential applications, such as solar blind UV photodetectors and heterostructures for UV emitters and intersubband devices.

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Solar-blind UV region and UV detector development objectives

Cited by 81 publications

References 0 publications

AlGaN Ultraviolet Metal–Semiconductor–Metal Photodetectors with Reduced Graphene Oxide Contacts

AlGaN Ultraviolet Metal–Semiconductor–Metal Photodetectors with Reduced Graphene Oxide Contacts

Using real-time embedded system with multiple DSPs in corona detection

Nondestructive atomic compositional analysis of BeMgZnO quaternary alloys using ion beam analytical techniques

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