Sol–gel reaction stability studied: Influence in the formation temperature and properties of ferroelectric thin films

Pérez, J.; Vilarinho, Paula M.; Kholkin, A. L.; Almeida, A.

doi:10.1016/j.materresbull.2008.07.010

Cited by 7 publications

(2 citation statements)

References 24 publications

(26 reference statements)

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“…Especially in recent years, piezoelectric materials have been developed toward micromation and miniaturization from block materials. Compared with traditional block materials, PST ferroelectric films have the advantages, such as light weight, small size [3], low operation voltage, which have been widely spreaded for other types of applications such as pyroelectric detectors [4], infrared sensors, ferroelectric film capacitors, film sensor array and film microwave device [5,6]. Because of sol-gel method in the process of operation has many uncertain factors, the best preparation technology has not completely understood.…”

Section: Introductionmentioning

confidence: 99%

Preparation of PST Ferroelectric Thin Films by Sol-Gel Process

You

Wang

et al. 2013

AMR

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Sol-gel method is used for the formation of Pb0.499Sr0.499TiO3 (PST)thin films. The initial films were prepared with spin coating sol solution on silicon wafer and drying at room temperature and then heating coated dry sol film at 400°C for 10min. This process was repeated for 1-4 times to obtain 4 initial films with different thicknesses. The 4 initial films were annealed at 700°C for 2h to obtain PST ceramics films. The morphologies of the surface and cross-section of PST films were observed with a scanning electronic microscope (SEM). The phase structures of PST films were analyzed using X-ray diffraction meter (XRD). Experimental results show that PST film prepared by coating sol on silicon with different thicknesses can be high smooth,uniform and compact film.

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Section: Introductionmentioning

confidence: 99%

Preparation of PST Ferroelectric Thin Films by Sol-Gel Process

You

Wang

et al. 2013

AMR

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“…Piezoelectric membrane materials have been developed from block materials. Compared with block materials, PZT ferroelectric films have the advantages, such as small size [3] , light weight, low operation voltage and compatible with semiconductor integrated circuits, which have been widely spreaded for other types of applications such as infrared sensors, pyroelectric detectors and micro-actuators for microelectro-mechanical systems possess [4] . Based on Landau thermodynamic model, the calculation results show the piezoelectric tunneling currents occur on ferroelectric film with the thickness of less than 30 nm under applying a force.…”

Section: Introductionmentioning

confidence: 99%

Preparation of PZT Ferroelectric Thin Films by Sol-Gel Process

You

Wang

et al. 2012

AMM

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Sol-gel method is used for the formation of Pb(Zr0.63Ti0.37)O3(PZT) thin films. The initial films were formed with spin coating sol solution on silicon wafer and drying coated wet sol film at 300°C for 5min. This process was repeated for 1-4 times to obtain 4 initial films with different thicknesses. 4 initial films were annealed at 500°C for 2h to obtain PZT ceramics films. The morphologies of the surface and cross-section of PZT films were observed with a scanning electronic microscope (SEM). The phase structures of PZT films were analyzed using an X-ray diffraction meter (XRD). Experimental results show that PZT film prepared by coating wet sol on silicon once can be high smooth and compact film.

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Synthesis, Processing and Application of Nanostructured Coatings

Mahmood

2011

Engineering Materials

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Sol–gel reaction stability studied: Influence in the formation temperature and properties of ferroelectric thin films

Cited by 7 publications

References 24 publications

Preparation of PST Ferroelectric Thin Films by Sol-Gel Process

Preparation of PST Ferroelectric Thin Films by Sol-Gel Process

Preparation of PZT Ferroelectric Thin Films by Sol-Gel Process

Synthesis, Processing and Application of Nanostructured Coatings

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