Preparation of PZT Ferroelectric Thin Films by Sol-Gel Process

Abstract

Sol-gel method is used for the formation of Pb(Zr0.63Ti0.37)O3(PZT) thin films. The initial films were formed with spin coating sol solution on silicon wafer and drying coated wet sol film at 300°C for 5min. This process was repeated for 1-4 times to obtain 4 initial films with different thicknesses. 4 initial films were annealed at 500°C for 2h to obtain PZT ceramics films. The morphologies of the surface and cross-section of PZT films were observed with a scanning electronic microscope (SEM). The phase structures of PZT films were analyzed using an X-ray diffraction meter (XRD). Experimental results show that PZT film prepared by coating wet sol on silicon once can be high smooth and compact film.

Preparation of PST Ferroelectric Thin Films by Sol-Gel Process

“…The above coating process was cycled by 1 to 4 times respectively, to obtain four film specimens with different layers and thickness. Finally, the film specimens were annealed at 700℃for 2h [7]. The films were coated with Au coating for the increase in conductivity of the specimens during SEM observation.…”

Effect of Oxygen Partial Pressure on Formation of Fe₂O₃ Nanostructure during Thermal Oxidation

“…It has been reported that Fe 2 O 3 nanowires and nanobelts with rhombic hexahedral structure has been prepared using the method of thermal oxidation. Fe 2 O 3 is an important metal oxide widely used in high flash paint, electronic [3], high magnetic recording materials, catalyst [4] and biomedical engineering, etc.…”