Sober view on extreme ultraviolet lithography

Lin, Burn J.

doi:10.1117/1.2358112

Cited by 12 publications

(5 citation statements)

References 29 publications

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“…It also makes sophisticated optical proximity corrections unnecessary, even though shadowing and non-uniform stray light require field-position-dependent corrections. There are close to 20 years of EUV development [11] resulting in impressive advances from the tremendous amount of research and funding. The physics associated with EUV is elegant.…”

Section: Scannermentioning

confidence: 99%

Litho/mask strategies for 32-nm half-pitch and beyond: using established and adventurous tools/technologies to improve cost and imaging performance

Lin

2009

SPIE Proceedings

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Cost and imaging are becoming big concerns in lithographic patterning of 32-nm half pitch and beyond, affecting the choice of lithographic patterning tools and the corresponding mask technology. In this paper, the cost and imaging aspects of ArF immersion double patterning, multiple e-beam maskless lithography, and extreme-uv lithography are discussed with proposals to make the cost acceptable. The impacts of these technologies to the masking industry are quite different. They are also given here. Some comments are made on nano-imprint lithography.

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Section: Scannermentioning

confidence: 99%

Litho/mask strategies for 32-nm half-pitch and beyond: using established and adventurous tools/technologies to improve cost and imaging performance

Lin

2009

SPIE Proceedings

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“…Because of reflective mask and oblique chief ray, mask translation in the longitudinal direction induces overlay error. The lateral displacement [1] is,…”

Section: 43mentioning

confidence: 99%

Making lithography work for the 7-nm node and beyond in overlay accuracy, resolution, defect, and cost

Lin

2015

Microelectronic Engineering

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“…This technique is expected to improve resolution by using high-energy, short wavelength radiation. The shift to shorter wavelengths will be met with many difficult and costly engineering and materials challenges, such as requirements for new photoresists, high-precision reflective optics, and improved EUV sources [164]. Both liquid-immersion lithography and EUVL have been covered in detail in recent reviews [149,163].…”

Section: Photolithographymentioning

confidence: 99%

Unconventional methods for forming nanopatterns

Stewart

Motala

Yao

et al. 2006

Proceedings of the Institution of Mechanical Engineers, Part N:

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Nanostructured materials have become an increasingly important theme in research, in no small part due to the potential impacts this science holds for applications in technology, including such notable areas as sensors, medicine, and high-performance integrated circuits. Conventional methods, such as the top-down approaches of projection lithography and scanning beam lithography, have been the primary means for patterning materials at the nanoscale. This article provides an overview of unconventional methods -both top-down and bottom-up approaches -for generating nanoscale patterns in a variety of materials, including methods that can be applied to fragile molecular systems that are difficult to pattern using conventional lithographic techniques. The promise, recent progress, advantages, limitations, and challenges to future development associated with each of these unconventional lithographic techniques will be discussed with consideration given to their potential for use in large-scale manufacturing.

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Sober view on extreme ultraviolet lithography

Cited by 12 publications

References 29 publications

Litho/mask strategies for 32-nm half-pitch and beyond: using established and adventurous tools/technologies to improve cost and imaging performance

Litho/mask strategies for 32-nm half-pitch and beyond: using established and adventurous tools/technologies to improve cost and imaging performance

Making lithography work for the 7-nm node and beyond in overlay accuracy, resolution, defect, and cost

Unconventional methods for forming nanopatterns

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