Making lithography work for the 7-nm node and beyond in overlay accuracy, resolution, defect, and cost

Lin, Burn J.

doi:10.1016/j.mee.2015.04.033

Cited by 28 publications

(15 citation statements)

References 6 publications

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“…Of course, the exact COO difference between EUV and 193i based multi-patterning will not be known until EUV is ready for HVM, but a commonly applied rule of thumb in the industry is to assume that anytime an EUV step can eliminate 3 or more 193i mask steps and it becomes cost effective. 15,16 There are additional lithography options that can be considered as well to enable future scaling. Electron beam (e-beam) lithography 16 and nano-imprint lithography (NIL) 17,18 represent two such options.…”

Section: -3mentioning

confidence: 99%

“…15,16 There are additional lithography options that can be considered as well to enable future scaling. Electron beam (e-beam) lithography 16 and nano-imprint lithography (NIL) 17,18 represent two such options. Further development on these and other processes which could be capable of sub-10 nm resolution lithography is certainly warranted and would provide some relief from the lithography bottleneck.…”

Section: -3mentioning

confidence: 99%

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Perspective: New process technologies required for future devices and scaling

Clark¹,

Tapily²,

Yu³

et al. 2018

APL Materials

148

179

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This paper presents an overview and perspective on processing technologies required for continued scaling of leading edge and emerging semiconductor devices. We introduce the main drivers and trends affecting future semiconductor device scaling and provide examples of emerging devices and architectures that may be implemented within the next 10-20 yr. We summarize multiple active areas of research to explain how future thin film deposition, etch, and patterning technologies can enable 3D (vertical) power, performance, area, and cost scaling. Emerging and new process technologies will be required to enable improved contacts, scaled and future devices and interconnects, monolithic 3D integration, and new computing architectures. These process technologies are explained and discussed with a focus on opportunities for continued improvement and innovation.

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Section: -3mentioning

confidence: 99%

Section: -3mentioning

confidence: 99%

Perspective: New process technologies required for future devices and scaling

Clark¹,

Tapily²,

Yu³

et al. 2018

APL Materials

148

179

View full text Add to dashboard Cite

show abstract

“…As next-generation technology nodes (<7 nm) continue to push the limits of Moore’s Law, , manufacturing requirements are outpacing the capabilities of conventional 193 nm ArF lithography. Advanced techniques such as immersion lithography or self-aligned double and quadruple patterning (SADP/SAQP) can further reduce feature size, but they also increase manufacturing complexity and cost. , Shorter wavelengths of light, such as that used by extreme ultraviolet lithography (EUVL, λ = 13.5 nm), provide an effective method to achieve smaller pattern dimensions without the increase in cost and complexity associated with multi-patterning techniques. − While EUVL has already demonstrated sub-20 nm patterns, , new resist materials and processes are needed that simultaneously meet the qualifications for resolution, line-edge roughness (LER), and sensitivity. ,, …”

Section: Introductionmentioning

confidence: 99%

Enhancing Performance and Function of Polymethacrylate Extreme Ultraviolet Resists Using Area-Selective Deposition

et al. 2023

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Extreme ultraviolet (EUV) lithography is a critical enabler in nextgeneration technology, although the low etch resistance of conventional organic EUV resists results in low resolution pattern transfer, particularly for smaller features. In this work, we integrate area-selective deposition (ASD), a bottom-up nanopatterning technique, with EUV resists of industrially relevant thicknesses (<50 nm thick) to form resist hardening or tone inverting layers for improved resolution. We utilize TiO 2 ASD via atomic layer deposition on 25−35 nm thin photosensitive polymethacrylate-based EUV materials. By tuning the polymer structure and functionality, we enable different scenarios for selective deposition on top of the resist, infiltrated into the bulk resist, or selective to the resist. We find that a cyclohexyl protecting group causes TiO 2 inhibition, thus showing promise for tone inversion applications with oxide underlayers. In contrast, resist materials containing a tert-butyl protecting group are good candidates for resist hardening because they enable TiO 2 deposition on both EUV exposed and unexposed polymers. Furthermore, we report the integration of a dimethylamino-trimethylsilane inhibitor with the resists to inhibit TiO 2 surface nucleation and facilitate subsurface diffusion, thus further broadening potential applications. The results described here establish an important baseline for utilizing ASD on various organic resists to achieve tone inversion or resist hardening and hence improve EUV pattern resolution.

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“…Optical lithography has survived multiple hurdles and still dominates the market with patterns less than 7 nm in size. 1,2 As nanofabrication costs are greatly reduced with the aid of remarkable breakthroughs happening in the throughput values, lithography is the costliest step of the overall nanofabrication. 3 Moreover, further shrinkage of the scales is still the commonly accepted roadmap with the aim of staying loyal to Moore's law as major chip production companies announces their new transistor sizes.…”

Section: Introductionmentioning

confidence: 99%

An effective lithography training module adapting semianalytical calculation approaches

2021

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A complete, self-sufficient package is prepared to teach the fundamental concepts of lithography. The adapted semianalytical approaches promise to illustratively create an ideal engaging environment for efficiently training next generation lithographers. The presented educational tool, which integrates the well-known modeling methods from the literature, is shown to capture the photolithography process step by step while offering the students a remote, hands-on feeling from introductory to graduate-level work. The importance of optical and chemistry related parameters are discussed with the aim of creating a useful laboratory assessment package for the educators to be easily integrated into their curriculum.

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Making lithography work for the 7-nm node and beyond in overlay accuracy, resolution, defect, and cost

Cited by 28 publications

References 6 publications

Perspective: New process technologies required for future devices and scaling

Perspective: New process technologies required for future devices and scaling

Enhancing Performance and Function of Polymethacrylate Extreme Ultraviolet Resists Using Area-Selective Deposition

An effective lithography training module adapting semianalytical calculation approaches

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