SiO2 formation in oxygen-implanted silicon

Ahilea, T.; Zolotoyabko, E.

doi:10.1016/s0022-0248(98)00998-1

Cited by 5 publications

(3 citation statements)

References 14 publications

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“…2a). This RC fine structure (similar to that observed for the Si samples implanted with oxygen, helium or hydrogen [6,8]) reflects the depth-dependent lattice swelling produced close to the crystal surface by ion implantation [3,4].…”

Section: Resultssupporting

confidence: 70%

“…Implantation-induced amorphisation near R p (projected range of implanted ions) is accompanied by changes of the volume and density of the host matrix and by swelling of the damaged area. Basing on reported results, it may be concluded that swelling in the as-implanted samples is caused mostly by point defects, generated at much higher concentration than that of the introduced ions [3,4]. In spite of the incorporation of extra ions into the Si lattice during implantation, the presence of extra vacancies in the implanted region would imply that a fraction of displaced Si atoms migrate towards the sample surface [5].…”

Section: Introductionmentioning

confidence: 84%

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Effect of High Pressure - Temperature on Structure of Silicon Crystals Implanted with Nitrogen / Silicon

Bąk‐Misiuk

Misiuk

Shalimov³

et al. 2003

SSP

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Enhanced pressure (HP) at annealing exerts pronounced effect on the structural properties of Si crystals implanted with N (Si:N) or Si (Si:Si). The structural properties of Si:N and Si:Si treated under HP are different. In the case of Si:N and Si:Si prepared in the similar way, with implanted dose 2´10 16 cm -2 and energy 150 keV, a buried nitrogen-containing layer was created in Si:N after the treatment at HP -1270 K for 1 h while dense array of dislocations was detected in the reference Si:Si samples. The observed changes of strain in Si:Si are related to out-diffusion of interstitial silicon atoms from the damaged areas to the sample surface and to creation of numerous extended defects within the implanted atoms range.

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Section: Resultssupporting

confidence: 70%

Section: Introductionmentioning

confidence: 84%

Effect of High Pressure - Temperature on Structure of Silicon Crystals Implanted with Nitrogen / Silicon

Bąk‐Misiuk

Misiuk

Shalimov³

et al. 2003

SSP

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show abstract

“…Refs. 19,20), a sharp jump in (∆d/d) appears (independently of the implanted ion and the matrix types) at the end of ion trajectories (at a depth, R p ), where ion velocities are close to zero and they cause maximum damage. It is reasonable to assume that the change of lattice parameter in the sublayer, confined at a depth R p , is proportional to the interstitials concentration, C. Thus, the measurement of the angular separation, ∆Θ, between interstitials-induced and bulk peaks, according to Eq.…”

Section: Resultsmentioning

confidence: 99%