Percolation problem in boron—Implanted mercury cadmium telluride

Mainzer, N.; Zolotoyabko, E.

doi:10.1007/s11664-000-0226-x

Cited by 4 publications

(1 citation statement)

References 21 publications

(28 reference statements)

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“…The applicability of the percolation model, known in FCC metals, to HgCdTe was justified by the negligible intermixing of the two FCC sublattices (Te and Hg,Cd) at temperatures much lower than the growth temperatures. 48 The percolation phenomenon was used 46,47 to explain the limited mobility of the implanted boron in HgCdTe with x~0.2. At such a low Cd concentration (below the percolation limit) the number of Cd atoms surrounding a Cd interstitial was insufficient to provide a continuous long-range path for defect diffusion.…”

Section: Junction Formationmentioning

confidence: 99%

Thirty years of HgCdTe technology in Israel

Weiss

2009

SPIE Proceedings

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The study of HgCdTe technology in Israel began in the mid 1970's under the leadership of the late Prof. Kidron and his group at the Technion, Israel Institute of Technology. The R&D efforts were continued by other groups at the Technion and other universities and research institutes in Israel, as well as by SCD. Many aspects of the technology of this material were studied, including both bulk crystal and epitaxial growths and microelectronic fabrication methods, with an emphasis on surface treatment and passivation. Various characterization methods were developed to study both the basic and applied material and device properties. The efforts, reviewed in this article, matured at SCD as it commercialized the HgCdTe technology, launching large-volume production lines of state-of-the-art linear and multi-linear TDI LWIR detector arrays of various sizes from 10×1 to 480×6 elements. Over the years, SCD has supplied its customers with thousands of both photoconductive (PC) and photovoltaic (PV) detectors, which are briefly presented in the paper.

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Section: Junction Formationmentioning

confidence: 99%