Thirty years of HgCdTe technology in Israel

Weiss, Eliezer

doi:10.1117/12.818237

Cited by 3 publications

(2 citation statements)

References 76 publications

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“…InSb based photodetector arrays exhibit high homogeneity of properties across their area, contain a large number of working cells and have a lower price as compared with similar devices fabricated on the basis of HgCdTe (MCT). These advantages make InSb a key material for the fabrication of large middle IR range arrays [1][2][3][4][5]. Figure 1 shows a sales chart of photodetector arrays fabricated on the basis of different materials.…”

Section: Introductionmentioning

confidence: 99%

Growth of 100 mm indium antimonide single crystals by modified Czochralski technique

Kozlov¹,

Kormilitsina²,

Молодцова³

et al. 2021

MoEM

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Currently there is a worldwide trend to increase the diameter of crystals grown from elemental semiconductors and semiconductor compounds. According to literary data the diameter of 3–5 semiconductor single crystals grown nowadays is 4 to 6 inches. So far up to 75 mm indium antimonide single crystals have been grown in Russia. Indium antimonide is the element base for the widest field of solid state electronics, i.e., optoelectronics. Indium antimonide is used for the fabrication of 3–5 mm range linear photodetectors and photodetector arrays used as light-sensitive material in heat vision systems. Growth heat conditions have been selected and 100 mm [100] indium antimonide single crystals have been grown using the modified two-stage Czochralski technique. The graphite heating unit has been oversized to accommodate a 150 mm crucible and a 4.5–5 kg load. The results of the work have provided for a substantial increase in the yield of photodetectors. The electrophysical properties of the as-grown single crystals have been studied using the Van der Pau method and proved to be in agreement with the standard parameters of undoped indium antimonide. Using the 9-field etch method of pit counting under an optical microscope the dislocation density in the 100 mm single crystals has been measured to be ≤ 100 cm-2which is similar to that for 50 mm single crystals.

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Section: Introductionmentioning

confidence: 99%

Growth of 100 mm indium antimonide single crystals by modified Czochralski technique

Kozlov¹,

Kormilitsina²,

Молодцова³

et al. 2021

MoEM

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“…Some off-area bonding fabrication techniques have been put forward [2,3] . The main idea of these techniques is to create a continuous slope sidewalls leading down to the sapphire.…”

Section: Introductionmentioning

confidence: 99%

The evaluation of curved extended electrodes for off-area bonding of HgCdTe photoconductive detectors

et al. 2011

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The formation process of devices' electrodes is one of the key techniques in the fabrication of HgCdTe infrared photoconductive detectors. A new structure of extended electrode has been developed and improved for low temperature stability. The parts of HgCdTe wafers exposed by photolithography are first dry etched until the sapphire substrate by ion beam milling (IBM). Then the contact metal films are deposited on HgCdTe and sapphire respectively. The main innovation of this paper is the optimization of the thickness of contact metal films. The traditional method of evaluation the stability of electrodes is to measure the changes of resistance when the devices are taken from normal temperature into low temperatures. Nevertheless, the changes of resistance are not sensitive to microdefects. So as to the effective evaluation of the contact metal films, another means (SEM) is utilized to get details about the microstructure of the contact metal films on the sidewall. In this paper, the topography of the improved sidewall contact metal was investigated by SEM. The outcome shows that a continuous columnar structure is gained by that optimization. No voids could be seen in the contact metals on the sidewall of etched HgCdTe, which reveals that the improved process is valid.It also indicated that SEM is a reasonable and efficient means to evaluate the quality of deposited metal film on the sidewall of a mesa structure in the fabrication of HgCdTe photoconductive detectors.

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Growing indium antimonide single crystals with a diameter of 100 mm by the modified Chochralsky method

Kozlov

Kormilitsina

Молодцова

et al. 2021

Izv. vysš. učebn. zaved., Mater. èlektron. teh.

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At present, all over the world there is a tendency to increase the diameters of single crystals of both elementary semiconductors and semiconductor compounds. There are reports indicating the use of single crystals of III-V semiconductors with a diameter of four to six inches. So far, indium antimonide single crystals up to 75 mm in diameter have been obtained in Russia.Indium antimonide is the element base of the broadest field of solid-state electronics — optoelectronics. On its basis, linear and matrix photodetectors are manufactured, operating in the spectral wavelength range of 3-5 microns, which are used as a viewing element in thermal imaging systems.In this work, we selected the thermal growth conditions and obtained indium antimonide single crystals 100 mm in diameter in the crystallographic direction [100]. The solution of this problem has made it possible to significantly increase the yield of suitable photodetectors.Single crystals 100 mm in diameter were grown by the Czochralski method in a two-stage process. The design of the graphite heating unit was enlarged and matched to a working crucible with a diameter of 150 millimeters and a load of 4.5-5 kg.The Van der Pauw method was used to measure the electrical properties of the obtained single crystals, which corresponded to the standard parameters of undoped indium antimonide. Using an optical microscope, the etching pits were counted using the 9-field method. The dislocation density in crystals with a diameter of 100 mm was ≤ 100 cm-2 and corresponded to the values for crystals of 50 mm.

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Thirty years of HgCdTe technology in Israel

Cited by 3 publications

References 76 publications

Growth of 100 mm indium antimonide single crystals by modified Czochralski technique

Growth of 100 mm indium antimonide single crystals by modified Czochralski technique

The evaluation of curved extended electrodes for off-area bonding of HgCdTe photoconductive detectors

Growing indium antimonide single crystals with a diameter of 100 mm by the modified Chochralsky method

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