Band bending at the Si(100)–Si3N4 interface studied by photoreflectance spectroscopy

Dev, Kapil; Seebauer, Edmund G.

doi:10.1016/j.susc.2005.03.026

Cited by 6 publications

(4 citation statements)

References 33 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The measurement of the SPV effect can also be combined with other methods, such as photoreflectance (PR) to measure the band bending. − When the surface band bending changes, the near-surface electric field is changed and will alter the dielectric function. The dielectric function change can be measured by the PR change for light frequencies near the bandgap energy. , Thus photoreflectance spectroscopy with a modulated laser beam having a photon energy greater than the bandgap energy of the semiconductor can be used to measure band bending.…”

Section: Measurements Of Band Bending At Semiconductor Surfacesmentioning

confidence: 99%

Band Bending in Semiconductors: Chemical and Physical Consequences at Surfaces and Interfaces

2012

View full text Add to dashboard Cite

Section: Measurements Of Band Bending At Semiconductor Surfacesmentioning

confidence: 99%

Band Bending in Semiconductors: Chemical and Physical Consequences at Surfaces and Interfaces

2012

View full text Add to dashboard Cite

“…23 Fermi level pinning can begin to occur at this concentration if all the defects support charge and the density of interface states is localized to a particular energy. 35 Photoreflectance measurements by published procedures [32][33][34] confirmed the presence of a modest degree of band bending for this material.…”

Section: Methodsmentioning

confidence: 61%

“…As the amount of fixed charge at an Si-SiO 2 interface varies depending upon the formation conditions of the oxide, [32][33][34] we performed diffusion experiments to compare native and thermally grown oxides:…”

Section: Methodsmentioning

confidence: 99%

Interface-Mediated Photostimulation Effects on Diffusion and Activation of Boron Implanted into Silicon

Kondratenko

Seebauer

2013

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

Recent work has demonstrated the existence of nonthermal illumination effects on the diffusion of boron, arsenic, and isotopic silicon ion-implanted into silicon for ultra-shallow junction applications. In some cases, the degree of electrical activation is affected as well. The effects arise from super-bandgap light's direct action on bulk point defects via changes in their charge state. By contrast, the present work demonstrates the existence of a distinct mechanism whereby light acts indirectly on bulk defects via changes at a nearby interface. The changes occur in interfacial annihilation probability and/or electric potential, and affect the efficiency with which the interface absorbs point defects emitted by extended end-of-range defects during annealing.Formation of shallow pn junctions for integrated circuits requires ion implantation of dopants followed by annealing to reduce implantation damage and to promote electrical activation of the dopants. Annealing technology relies upon rapid heating by incandescent lamps, flash lamps or lasers. 1 The optical stimulation was long thought to supply heating alone, although scattered experimental evidence had hinted at additional nonthermal influences on diffusion and activation of phosphorous, 2 arsenic, 3-5 and boron. 4,6-8 However, the experiments were difficult to interpret reliably because lamps supplied the heating, thereby complicating the decoupling of heating and photostimulation effects. Some progress was achieved in quantifying photoenhanced diffusion in II-VI semiconductors (using computational methods) 9 and a-Si:H (experimentally), 10 yet the understanding of the photostimulated dopant diffusion in c-Si remained inadequate. This laboratory has employed a novel experimental configuration to eliminate the ambiguity, and has thereby demonstrated the influences of low-intensity (<1 W/cm 2 ) super-bandgap illumination − first on the surface diffusion of various adsorbates on Si, 11,12 and subsequently on the bulk self-diffusion of Si 13,15 as well as the bulk diffusion and electrical activation of As and B implanted into silicon. 14 As first suggested for surface diffusion 11,12,15,16 and later modeled quantitatively for bulk Si self-diffusion, 13 photostimulation can influence diffusional flux rates by changing the average electrical charge state of point defects involved with diffusion, although the exact mechanism depends upon the specific case. For surface diffusion of Group III, IV and V elements on Si, the mass flux is carried by adatoms that can be rendered immobile by substitution into the top layer of the substrate. Escape from this substitutional state leaves behind a surface vacancy that can take on a variety of charge states depending upon the local concentrations of electrons and holes. Photostimulation exerts its influence by changing these carrier concentrations, which propagates into the average charge state of the vacancies, then into the effective formation energy for creating an adatom and vacancy, and finally into the concentration of ad...

show abstract

“…It is important in the fields of electrochemistry, , gas sensing, and photocatalysis. Techniques for assessing band bending include XPS, − photoluminescence, − surface photovoltaic spectroscopy, , scanning probe microscopy, , and photon-stimulated desorption (PSD) . In the case of gold deposition on stoichiometric TiO 2 (110), it was determined that downward band bending occurs at low Au coverages, as indicated by shifts of the Ti 2p and O 1s XPS peaks and by measuring the PSD yield curves of O 2 + and modeling them with DFT calculations …”

Section: Introductionmentioning

confidence: 99%

Metallization of TiO₂(110) with Gold and Lithium

Somaratne

Whitten

2021

J. Phys. Chem. C

View full text Add to dashboard Cite

Gold and lithium have been deposited on clean, stoichiometric TiO 2 (110) to study the evolution of the electronic structure of the surface. For thermally deposited gold, X-ray and ultraviolet photoelectron spectroscopies (XPS and UPS) indicate that the first monolayer (ML) grows two dimensionally, while additional gold forms islands, and that the surface becomes metallic by 1 ML. Downward band bending for low coverage is confirmed by a comparison of the XPS valence and UPS spectra, which have different detection depths. Inverse photoelectron spectroscopy (IPES) shows that the deposited gold attenuates the Ti 3d states, which dominate the conduction band. In the case of lithium, XPS analysis indicates that deposited atoms penetrate into the bulk, with a gradual buildup in the near-surface region. UPS shows the formation of a Ti 3+ 3d gap state 1.4 eV below the Fermi level. Band bending is not observed for low Li coverage due to pinning of the Fermi level to the gap state. Deposition of more than 10 ML is required for the work function to reach that of bulk Li. Unoccupied 3d states disappear from the IPES spectrum as they are filled by electrons injected from Li.

show abstract

Band bending at the Si(100)–Si3N4 interface studied by photoreflectance spectroscopy

Cited by 6 publications

References 33 publications

Band Bending in Semiconductors: Chemical and Physical Consequences at Surfaces and Interfaces

Band Bending in Semiconductors: Chemical and Physical Consequences at Surfaces and Interfaces

Interface-Mediated Photostimulation Effects on Diffusion and Activation of Boron Implanted into Silicon

Metallization of TiO₂(110) with Gold and Lithium

Contact Info

Product

Resources

About

Band bending at the Si(100)–Si3N4 interface studied by photoreflectance spectroscopy

Cited by 6 publications

References 33 publications

Band Bending in Semiconductors: Chemical and Physical Consequences at Surfaces and Interfaces

Band Bending in Semiconductors: Chemical and Physical Consequences at Surfaces and Interfaces

Interface-Mediated Photostimulation Effects on Diffusion and Activation of Boron Implanted into Silicon

Metallization of TiO2(110) with Gold and Lithium

Contact Info

Product

Resources

About

Metallization of TiO₂(110) with Gold and Lithium