Effect of High Pressure - Temperature on Structure of Silicon Crystals Implanted with Nitrogen / Silicon

Abstract

Enhanced pressure (HP) at annealing exerts pronounced effect on the structural properties of Si crystals implanted with N (Si:N) or Si (Si:Si). The structural properties of Si:N and Si:Si treated under HP are different. In the case of Si:N and Si:Si prepared in the similar way, with implanted dose 2´10 16 cm -2 and energy 150 keV, a buried nitrogen-containing layer was created in Si:N after the treatment at HP -1270 K for 1 h while dense array of dislocations was detected in the reference Si:Si samples. The observed changes of strain in Si:Si are related to out-diffusion of interstitial silicon atoms from the damaged areas to the sample surface and to creation of numerous extended defects within the implanted atoms range.

Stress - Dependent Out - Annealing of Defects in Self - Implanted Silicon

“…The volume of disordered / amorphous silicon is larger than that of crystalline Si so damaged areas in Si:Si are under compression. As proven earlier [4,5], recovery of the Si:Si structure at HT is dependent on stress exerted by hydrostatic pressure (HP) at annealing. HP affects recrystallization of aSi also because of changed stress at the aSi / Si boundary.…”

“…HP affects recrystallization of aSi also because of changed stress at the aSi / Si boundary. The effect of HP on recovery of the structure of Si subjected to high dose (D = 5 -10x10 16 cm -2 ) self -implantation (published data [4,5] concerned mostly Si:Si implanted with D = 2x10 16 cm -2 ) is now reported.…”