SiO2 Etching using high density plasma sources

Tsukada, Tsutomu; Nogami, Hiroshi; Nakagawa, Yukito; Wani, Etsuo; Mashimo, Kimiko; Sato, H.; Samukawa, Seiji

doi:10.1016/s0040-6090(98)01525-9

Cited by 5 publications

(1 citation statement)

References 6 publications

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“…High density plasma system has so far been considered as a key instrument for display system applications. High density plasma illustrates high deposition rate, better film crystal structure and improved etching characteristics [1,2]. Dry etching techniques have become an essential part in the manufacturing of microelectronic devices [3].…”

Section: Introductionmentioning

confidence: 99%

High-Density Hollow Cathode Plasma Etching for Field Emission Display Applications

Lee

Choi³

et al. 2001

Journal of Information Display

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This paper investigates the characteristics of a newly developed high density hollow cathode plasma(HCP) system and its application for the etching of silicon wafers. We used SF 6 and O 2 gases in the HCP dry etch process. This paper demonstrates very high plasma density of 2?10 12 cm -3 at a discharge current of 20 mA. Silicon etch rate of 1.3 ? m/min was achieved with SF 6 /O 2 plasma conditions of total gas pressure of 50 mTorr, gas flow rate of 40 sccm, and RF power of 200 W. This paper presents surface etching characteristics on a crystalline silicon wafer and large area cast type multicrystlline silicon wafer. We obtained field emitter tips size of less than 0.1 ? m without any photomask step as well as with a conventional photolithography. Our experimental results can be applied to various display systems such as thin film growth and etching for TFT-LCDs, emitter tip formations for FEDs, and bright plasma discharge for PDP applications. In this research, we studied silicon etching properties by using the hollow cathode plasma system.

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Section: Introductionmentioning

confidence: 99%

High-Density Hollow Cathode Plasma Etching for Field Emission Display Applications

Lee

Choi³

et al. 2001

Journal of Information Display

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The effectivity of haloalkane (CH<inf>2</inf>FCF<inf>3</inf>) plasma in selective etching of a quartz crystal microbalance biosensor

Santjojo

Sakti

Masruroh

2017

2017 International Seminar on Sensors, Instrumentation, Measurement and Metrology (ISSIMM)

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High resolution powder blast micromachining

Wensink

Berenschot²,

Jansen³

et al.

Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308)

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Powder blasting, or Abrasive Jet Machining (AJM), is a technique in which a particle jet is directed towards a target for mechanical material removal. It is a fast, cheap and accurate directional etch technique for brittle materials like glass, silicon and ceramics. By introducing electroplated copper as a new mask material, the feature size of this process was decreased. It was found that blasting with 9 pm particles (compared with 30 pm particles) result in a higher slope of the channel sidewall. The aspect ratio of powder blasted channels was increased by using the high resistance of the copper mask in combination with the use of 9 pm particles. Furthermore, our measurements show how the blast lag (small channels etch slower compared to wider channels) is decreased by using smaller particles.

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SiO2 Etching using high density plasma sources

Cited by 5 publications

References 6 publications

High-Density Hollow Cathode Plasma Etching for Field Emission Display Applications

High-Density Hollow Cathode Plasma Etching for Field Emission Display Applications

The effectivity of haloalkane (CH<inf>2</inf>FCF<inf>3</inf>) plasma in selective etching of a quartz crystal microbalance biosensor

High resolution powder blast micromachining

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