Abstract:This paper investigates the characteristics of a newly developed high density hollow cathode plasma(HCP) system and its application for the etching of silicon wafers. We used SF 6 and O 2 gases in the HCP dry etch process. This paper demonstrates very high plasma density of 2?10 12 cm -3 at a discharge current of 20 mA. Silicon etch rate of 1.3 ? m/min was achieved with SF 6 /O 2 plasma conditions of total gas pressure of 50 mTorr, gas flow rate of 40 sccm, and RF power of 200 W. This paper presents surface et… Show more
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The argon temperature and the emission intensity in the hollow cathode discharge were measured. We measured the line profiles of the 1s 5 -2p 8 transition in argon, using a single-frequency diode laser. Low power diode lasers have been used to investigate the line profiles of argon transitions in hollow cathode discharges. It turns out that the argon temperature is 640-783 K in the discharge current range of 7.00-10.0 mA. The emission intensity is uniform in the negative glow at the current range over 5.00 mA under the pressure of 3.00 Torr.
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