Single-step, rapid low-temperature synthesis of Si quantum dots embedded in an amorphous SiC matrix in high-density reactive plasmas

Cheng, Qijin; Xu, Shuyan; Ostrikov, Kostya Ken

doi:10.1016/j.actamat.2009.09.034

Cited by 80 publications

(49 citation statements)

References 46 publications

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“…However, they have drawbacks such as needing a high process temperature, difficulty in the photolithography process and poor thermal stability [4][5][6]. As a wide bandgap semiconductor, SiC film can be found in electronic devices in the field of high temperature resistance, thermal conductivity and optical applications because of its stability and excellent characteristics [7][8][9]. These unique properties make amorphous silicon carbide (a-SiC) passivation layer an excellent alternative material for silicon solar cells [10,11].…”

Section: Introductionmentioning

confidence: 99%

The effect of deposition RF power on the SiC passivation layer synthesized by an RF magnetron sputtering method

Seo

Choi

et al. 2011

Journal of Crystal Growth

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Section: Introductionmentioning

confidence: 99%

The effect of deposition RF power on the SiC passivation layer synthesized by an RF magnetron sputtering method

Seo

Choi

et al. 2011

Journal of Crystal Growth

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“…Figure 3 shows a clear peak located near 520 cm −1 for samples with the annealing temperature higher than 800 • C corresponding to the characteristic Raman peak of silicon nanocrystals. 13 The spectrum of the 700 • C annealed sample exhibits an asymmetric weak hump centered at ∼ 480 cm −1 , attributing to the transverse optical (TO) mode of amorphous silicon. 14 The intensity of the crystalline silicon characteristic peak increases with the increased annealing temperature due to the formation of a higher Si QDs density.…”

Section: Resultsmentioning

confidence: 98%

Fabrication and characterization of high density silicon quantum dots in gradient Si-rich carbide films

Chen

2014

Mod. Phys. Lett. B

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Gradient Si-rich carbide (GSRC) thin films were deposited on monocrystalline silicon wafers and quartz substrates by magnetron co-sputtering, with subsequent thermal annealing by rapid thermal processing. Fourier transform infrared spectroscopy, Raman spectroscopy, grazing incident X-ray diffraction, transmission electron microscope, and Hall measurements were used to analyze the microstructure and conductivity of the films. It was observed that bonding configurations, microstructure and conductivity properties changes with the annealing temperature from 700 • C to 1000 • C. The experimental results demonstrate that Si QDs with crystal volume fraction of 72.5%, average size of 4.5 nm, and number density of ∼ 2 × 10 12 cm −2 embedded in the amorphous SiC matrix can be formed using a GSRC multilayer structure, with subsequent annealing at 1000 • C. The 1000 • C annealed thin film possesses a conductivity of ∼ 5 S · cm −1 , which can be attributed to high carrier transport efficiency caused by high Si QD density.

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“…The sensitivity factors used in this work are 0.205, 0.38, and 0.63 for carbon, nitrogen, and oxygen elements, respectively. 15,19 The detailed binding energies of C 1s, N 1s, and O 1s peaks and the elemental composition for samples A-C are shown in Table II.…”

Section: Resultsmentioning

confidence: 99%

Enhanced electron field emission from plasma-nitrogenated carbon nanotips

Wang

Cheng

Zhong

et al. 2012

Journal of Applied Physics

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Competition of nitrogen doping and graphitization effect for field electron emission from nanocrystalline diamond films J.Electron field emission from amorphous carbon nitride synthesized by electron cyclotron resonance plasma Nitrogenated carbon nanotips (NCNTPs) are synthesized by plasma-enhanced hot filament chemical vapor deposition from the hydrogen, methane, and nitrogen gas mixtures with different flow rate ratios of hydrogen to nitrogen. The morphological, structural, compositional, and electron field emission (EFE) properties of the NCNTPs were investigated by field emission scanning electron microscopy, Raman spectroscopy, x ray photoelectron spectroscopy, and EFE high-vacuum system. It is shown that the NCNTPs deposited at an intermediate flow rate ratio of hydrogen to nitrogen feature the best size/shape and pattern uniformity, the highest nanotip density, the highest nitrogen concentration, as well as the best electron field emission performance. Several factors that come into play along with the nitrogen incorporation, such as the combined effect of the plasma sputtering and etching, the transition of sp 3 carbon clusters to sp 2 carbon clusters, the increase of the size of the sp 2 clusters, as well as the reduction of the work function, have been examined to interpret these experimental findings. Our results are highly relevant to the development of the next generation electron field emitters, flat panel displays, atomic force microscope probes, and several other advanced applications. V C 2012 American Institute of Physics.

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Single-step, rapid low-temperature synthesis of Si quantum dots embedded in an amorphous SiC matrix in high-density reactive plasmas

Cited by 80 publications

References 46 publications

The effect of deposition RF power on the SiC passivation layer synthesized by an RF magnetron sputtering method

The effect of deposition RF power on the SiC passivation layer synthesized by an RF magnetron sputtering method

Fabrication and characterization of high density silicon quantum dots in gradient Si-rich carbide films

Enhanced electron field emission from plasma-nitrogenated carbon nanotips

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