The effect of deposition RF power on the SiC passivation layer synthesized by an RF magnetron sputtering method

Seo, Jae Keun; Ko, Ki-Han; Choi, Won Seok; Park, Mungi; Lee, Jong Hwan; Yi, Junsin

doi:10.1016/j.jcrysgro.2011.01.093

Cited by 18 publications

(3 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Then, by increasing the RF power of the Si target, the refractive index goes up, and at the 200-W RF power, we achieved the highest refractive index of 3.7. This result has a very similar trend with our previous experiment which was done with a single SiC composite target [5]. The previous result has a very narrow refractive index variation (3.2 to 3.4) with the change of a large RF power range (150 to 300 W), but co-sputtering method shows a relatively large refractive index variation (2.7 to 3.7).…”

Section: Resultssupporting

confidence: 89%

See 1 more Smart Citation

SiC formation for a solar cell passivation layer using an RF magnetron co-sputtering system

et al. 2012

View full text Add to dashboard Cite

In this paper, we describe a method of amorphous silicon carbide film formation for a solar cell passivation layer. The film was deposited on p-type silicon (100) and glass substrates by an RF magnetron co-sputtering system using a Si target and a C target at a room-temperature condition. Several different SiC [Si1-xCx] film compositions were achieved by controlling the Si target power with a fixed C target power at 150 W. Then, structural, optical, and electrical properties of the Si1-xCx films were studied. The structural properties were investigated by transmission electron microscopy and secondary ion mass spectrometry. The optical properties were achieved by UV-visible spectroscopy and ellipsometry. The performance of Si1-xCx passivation was explored by carrier lifetime measurement.

show abstract

Section: Resultssupporting

confidence: 89%

“…Generally, a semiconductor structure or system is manufactured by a combination of additive (film deposition) and subtractive (etching) processes. These days, many research have tried to utilize the microelectronic technology (especially in the deposition of thin film layers) to get more efficient and cost-effective solar cells [4,5]. …”

Section: Introductionmentioning

confidence: 99%

SiC formation for a solar cell passivation layer using an RF magnetron co-sputtering system

et al. 2012

View full text Add to dashboard Cite

show abstract

“…As described above, with increase in sputtering pressure, the surface of the films becomes rough and hence results in more scattered light and less transmittance. The film deposited at low sputtering power shows a high transmittance because of minimal scattering light loss caused by the rough surface [24]. The scattering light loss increases with increasing of sputtering power which leads to decrease in transmittance.…”

Section: Spektri Optičke Propusnosti A-sic Tankih Filmova Deponovanih...mentioning

confidence: 99%

Studies of structural and optical properties of sputtered SiC thin films

Mukesh Kumar

2024

Zas Mat

View full text Add to dashboard Cite

The present study explored the deposition of amorphous silicon carbide (a-SiC) thin films on Si (100) and glass substrates using RF-magnetron sputtering. The sputtering power is changed from 100 to 250 W to study its influence on the characteristics of a-SiC thin films. Raman spectroscopy reveals the formation of a-SiC as well as carbon clusters. The film deposited at 100 W clearly shows the presence of both transverse optical (TO) and longitudinal optical (LO) phonon modes. The average roughness of the a-SiC films found to follow an increasing trend with increase in the sputtering power. The optical band gap of the a-SiC films measured by UV-Visible spectrophotometer was found to increase up to 2.45 eV with decrease in sputtering power. All a-SiC thin films were highly transparent. The Photoluminescence (PL) spectroscopy results were in agreement with the data observed by UV-Visible spectroscopy

show abstract

On the Etching Mechanisms of SiC Thin Films in CF4/CH2F2/N2/Ar Inductively Coupled Plasma

Lee

Efremov

Kim

et al. 2016

Plasma Chem Plasma Process

View full text Add to dashboard Cite

The effect of deposition RF power on the SiC passivation layer synthesized by an RF magnetron sputtering method

Cited by 18 publications

References 14 publications

SiC formation for a solar cell passivation layer using an RF magnetron co-sputtering system

SiC formation for a solar cell passivation layer using an RF magnetron co-sputtering system

Studies of structural and optical properties of sputtered SiC thin films

On the Etching Mechanisms of SiC Thin Films in CF4/CH2F2/N2/Ar Inductively Coupled Plasma

Contact Info

Product

Resources

About