SiC formation for a solar cell passivation layer using an RF magnetron co-sputtering system

Joung, Yeun-Ho; Kang, Hyunil; Kim, Jung Hyun; Lee, Hae‐Seok; Lee, Jaehyung; Choi, Won Seok

doi:10.1186/1556-276x-7-22

Cited by 24 publications

(7 citation statements)

References 14 publications

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“…CuSbSe 2 thin films were deposited on 1 × 1 cm 2 Corning glass substrates using an RF magnetron cosputtering system (IDT Engineering Co., Gyeonggi, Korea) [24][25][26][27], as shown in Figure S1, with CuSe 2 (TASCO, Seoul, Korea, 99.99% purity, 2-inch diameter) target under a fixed power of 40 W and variable power for Sb (TASCO, 99.99% purity, 2-inch diameter) target from 13 to 21 W in increments of 2 W, while other parameters were kept constant using the following conditions: presputtering process for 5 min prior to each run, an Ar gas flux of 20 sccm, base pressure of 1.0 × 10 −6 Torr, substrate-to-target distance of 5.0 cm, and vacuum pressure of 7.5 × 10 −3 Torr during sputtering at room temperature. During the target cleaning procedure, the substrates were shielded with a shutter.…”

Section: Methodsmentioning

confidence: 99%

Impurity Phases and Optoelectronic Properties of CuSbSe2 Thin Films Prepared by Cosputtering Process for Absorber Layer in Solar Cells

Kim

2020

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When there is a choice of materials for an application, particular emphasis should be given to the development of those that are low-cost, nontoxic, and Earth-abundant. Chalcostibite CuSbSe2 has gained attention as a potential absorber material for thin-film solar cells, since it exhibits a high absorption coefficient. In this study, CuSbSe2 thin films were deposited by radio frequency magnetron cosputtering with CuSe2 and Sb targets. A series of CuSbxSe2 thin films were prepared with different Sb contents adjusted by sputtering power, followed by rapid thermal annealing. Impurity phases and surface morphology of Cu–Sb–Se systems were directly affected by the Sb sputtering power, with the formation of volatile components. The crystallinity of the CuSbSe2 thin films was also enhanced in the near-stoichiometric system at an Sb sputtering power of 15 W, and considerable degradation in crystallinity occurred with a slight increase over 19 W. Resistivity, carrier mobility, and carrier concentration of the near-stoichiometric thin film were 14.4 Ω-cm, 3.27 cm2/V∙s, and 1.33 × 1017 cm−3, respectively. The optical band gap and absorption coefficient under the same conditions were 1.7 eV and 1.75 × 105 cm−1, which are acceptable for highly efficient thin-film solar cells.

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Section: Methodsmentioning

confidence: 99%

Impurity Phases and Optoelectronic Properties of CuSbSe2 Thin Films Prepared by Cosputtering Process for Absorber Layer in Solar Cells

Kim

2020

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“…This makes a-SiC thin films a potential candidate for applications in many kinds of optoelectronic devices with spectral tunability, such as tunable light-emitting diodes, image sensors, solar cells and wide spectral range photodetectors [17][18][19][20][21] The a-SiC thin films have been used as a protective coating for extreme UV optics due to its high reflectivity in this spectral region [22]. It can effectively be used as a thermally stable surface passivation material for highly efficient thin film silicon-based photovoltaic devices [23]. Furthermore, a-SiC films are chemically and mechanically stronger and more durable in terms of temperature resistance than a-Si films.…”

Section: Introductionmentioning

confidence: 99%

Tailoring of stoichiometry and band-tail emission in PLD a-SiC thin films by varying He deposition pressure

Dey

Khare

2020

SN Appl. Sci.

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The present work focuses on the effect of He pressure (vacuum, 10 −2 -5 mbar) on structural and optical properties of amorphous silicon carbide (a-SiC) thin films, deposited by pulsed laser deposition (PLD) technique onto fused silica. A stoichiometric change occurs in PLD a-SiC film, with increasing He deposition pressure, transforming a near stoichiometric SiC material to C-rich SiC films till 1 mbar of He pressure followed by drastic decrease in carbon (C) content at 5 mbar. The optical band gap of the films estimated using Tauc plot from UV-Vis-NIR transmittance spectra showed initial increase from 2.09 to 2.61 eV with increasing He pressure from 10 −6 to 1 mbar, then decrease to 2.11 eV at 5 mbar. A broad band photoluminescence (PL) peak featured in each of the a-SiC films at room temperature. The PL spectra exhibited blue shift in peak energy from 1.8 to 2.2 eV with increase in atomic percentage of C from 49.4 to 62.4%. The origin of the PL exhibited in these films is clearly due to band tail emissions from amorphous SiC structures which has been explained by the observed variation of PL intensity and corresponding FWHM with band gap as well as Urbach energy.

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“…Кукушкин с соавторами [4,5,[8][9][10] достигли успехов в синтезе тонких эпитаксиальных пленок SiC на Si новым методом замещения атомов. Joung и соавторы [11] предложили метод осаждения аморфного a-Si 1−x C x с помощью радиочастотного магнетронного сораспыления двух или нескольких мишеней.…”

Section: Introductionunclassified

Низкотемпературный синтез нанокристаллов alpha-SiC

Нусупов¹,

Бейсенханов²,

Bakranova³

et al. 2019

Физика Твердого Тела

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Thick SiC_ x films have been deposited on a c -Si surface by radiofrequency (rf) magnetron sputtering (150 W, 13.56 MHz, Ar flow 2.4 L/h, 0.4 Pa) of graphite and silicon targets. The X-ray diffraction study shows that fast annealing of the SiC_ x film deposited on the c -Si surface for 3 h leads to the low-temperature (970°C) formation of hexagonal structural phases α-SiC (6 H -SiC and other) along with the cubic modification of silicon carbide β-SiC. The IR spectroscopy has shown the formation of SiC nanocrystal nuclei due to the energy action of the rf plasma ions on the upper layer of the SiC film during its growth. The data of X-ray reflectometry demonstrate a high density of the films up to 3.59 g/cm^2 as a result of formation of dense C and SiC clusters in the layers under action of the rf plasma.

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SiC formation for a solar cell passivation layer using an RF magnetron co-sputtering system

Cited by 24 publications

References 14 publications

Impurity Phases and Optoelectronic Properties of CuSbSe2 Thin Films Prepared by Cosputtering Process for Absorber Layer in Solar Cells

Impurity Phases and Optoelectronic Properties of CuSbSe2 Thin Films Prepared by Cosputtering Process for Absorber Layer in Solar Cells

Tailoring of stoichiometry and band-tail emission in PLD a-SiC thin films by varying He deposition pressure

Низкотемпературный синтез нанокристаллов alpha-SiC

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