For lower reflectance, we applied a maskless plasma texturing technique using reactive ion etching (RIE) on acidic-textured multicrystalline silicon (mc-Si) wafer. RIE texturing had a deep and narrow textured surface and showed excellent low reflectance. Due to plasma-induced damage, unless the RIE-textured surfaces have the proper damage removal etching (DRE), they have a drop inVocand FF. RIE texturing with a proper DRE had sufficiently higher short circuit current(Isc)than acidic-textured samples without a drop in open circuit voltage(Voc). And in order to improve efficiency of mc-Si solar cell, we applied RIE texturing with optimized DRE condition to selective emitter structure. In comparison with the acidic-textured solar cells, RIE-textured solar cells have above 200 mA absolute gain in Isc. And optimized RIE samples with a DRE by HNO3/HF mixture showed 17.6% conversion efficiency, which were made using an industrial screen printing process with selective emitter structure.
In this study, transparent and conductive Al-doped zinc oxide (AZO) films were prepared on a glass substrate by an radio frequency (RF) magnetron sputtering method using a 150-nm-thick AZO target (Al: 2 wt.%) at room temperature. We investigated the effects of RF power between 100-350 W (in steps of 50 W) on the structural, electrical, and optical properties of the AZO films. The thickness and cross-sectional images of the films were observed by field emission scanning electron microscopy. The thicknesses of all films were kept constant at 150 nm and grown on a glass substrate. The grain sizes of the AZO films were determined with the X-ray diffraction by using the Scherrer' equation, and their electrical properties were investigated using a Hall effect electronic transport measurement system. The transmittance of the AZO films was also measured by an ultraviolet-visible spectrometer.
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