Synthesis and Characterization of Al-Doped Zinc Oxide Films by an Radio Frequency Magnetron Sputtering Method for Transparent Electrode Applications

Abstract

In this study, transparent and conductive Al-doped zinc oxide (AZO) films were prepared on a glass substrate by an radio frequency (RF) magnetron sputtering method using a 150-nm-thick AZO target (Al: 2 wt.%) at room temperature. We investigated the effects of RF power between 100-350 W (in steps of 50 W) on the structural, electrical, and optical properties of the AZO films. The thickness and cross-sectional images of the films were observed by field emission scanning electron microscopy. The thicknesses of all films were kept constant at 150 nm and grown on a glass substrate. The grain sizes of the AZO films were determined with the X-ray diffraction by using the Scherrer' equation, and their electrical properties were investigated using a Hall effect electronic transport measurement system. The transmittance of the AZO films was also measured by an ultraviolet-visible spectrometer.

A Study on Properties of RF-sputtered Al-doped ZnO Thin Films Prepared with Different Ar Gas Flow Rates

“…Until now, Indium tin oxide(ITO) layers have been popular amongst TCO materials because of low resistivity and high visible transmittance [5][6][7]. However, Because of the toxicity, high cost and the rareness of the indium in the ITO films, the Al doped ZnO(AZO), Ga doped ZnO(GZO) thin films have been considered an ideal alternative material due to its nontoxicity, lower mater cost, high transmittance [8][9][10]. When Al-doped ZnO thin films are used as an Transparent electrodes, they should be required to have high transmission capabilities in a low resistivity ( ) and wavelength range of 400-800 nm (T ≥80%) [11].…”