Single Event Transients and Pulse Quenching Effects in Bandgap Reference Topologies for Space Applications

Abstract

Abstract-An architectural performance comparison of bandgap voltage reference variants, designed in a 0.18 µm CMOS process, is performed with respect to single event transients. These are commonly induced in microelectronics in the space radiation environment. Heavy ion tests (Silicon, Krypton, Xenon) are used to explore the analog single-event transients and have revealed pulse quenching mechanisms in analogue circuits. The different topologies are compared, in terms of cross-section, pulse duration and pulse amplitude. The measured results, and the explanations behind the findings, reveal important guidelines for designing analog integrated circuits, which are intended for space applications. The paper includes an analysis on how pulse quenching occurs within the indispensable current mirror, which is used in every analog circuit.

Low-Power, Subthreshold Reference Circuits for the Space Environment: Evaluated with γ-rays, X-rays, Protons and Heavy Ions

“…In general, the subthreshold circuits show somewhat higher sensitivity to heavy ions, in terms of σ and SETs' durations, compared to the strong inversion ones which were evaluated in previous work [90] by the authors. This is partly due to the lower supply voltage, which in turn needs less amount of deposited charge from the impinging ion in order to alter their nominal operating conditions of a particular circuit node.…”

“…However, due to the limited bandwidth, longer transient durations are required in order to appear at the output, which gives subthreshold circuits an advantage. Part of the higher sensitivity could also be attributed to the larger silicon area of those topologies compared to the ones in [90]. The SETs' amplitudes in subthreshold and strong inversion circuits in [90] are comparable.…”

“…Part of the higher sensitivity could also be attributed to the larger silicon area of those topologies compared to the ones in [90]. The SETs' amplitudes in subthreshold and strong inversion circuits in [90] are comparable. This is probably due to the same reason described above, where the larger time constants of the subthreshold circuits tend to filter out some of the transients.…”

Pulse Quenching and Charge-Sharing Effects on Heavy-Ion Microbeam Induced ASET in a Full-Custom CMOS OpAmp

“…Particularly in sub-micron technologies, charge sharing effects have been observed in digital [4], [19] and analog [12], [13], [15], [20] circuits. This can cause multiple errors by a single ion strike or even pulse quenching in ion-induced transients, resulting in a reduced overall sensitivity of the system against SEE [12], [13], [15], [20], [21]. Nevertheless, these effects are difficult to model or predict: main approaches to modeling involve complex, high computational cost simulations including technology computer assisted design tools (TCAD) integrated in complex multi-physical environments [22]- [25].…”

Bulk Bias as an Analog Single-Event Transient Mitigation Technique with Negligible Penalty

“…ASETs have been observed in space applications and are easily noted in simulations and experiments [2,3]. The heavy ion moves through the sensitive area in analog circuits and generates movable charges which are controlled by drift, diffusion, and parasitic bipolar effect [4].…”