Single-crystal silicon films on glass

Abstract

We present a new process based on the electrolysis of glass, which allows the transfer of a single-crystal silicon film while creating an in situ barrier layer free of mobile ions in the glass. This barrier layer consists only of network-forming elements (i.e., aluminum, silicon, and boron) and is free of modifiers. The barrier layer glass is unusual and cannot be synthesized via any of the known glass-forming processes. The barrier layer is thermally stable and thus allows the fabrication of displays with ultimate performance. The process consists of the hydrogen ion implantation of silicon to create a defect structure followed by bringing the glass and the silicon wafer in contact, and finally applying electrical potential to cause the electrolysis of glass.

Ultrathin Si Thin-Film Transistor on Glass

“…Then, oxygen ions migrate toward the Si, forming a very thin SiO 2 layer of ∼10 nm that creates a strong bond between the Si and Corning Eagle 2000 glass. At the same time, the positive network modifier ions migrate away from the Si, forming a mobile-ion free zone, a barrier layer, and an ion accumulation zone in the glass substrate [9]. The existence of a barrier layer of ∼100 nm and a thin SiO 2 was confirmed from the TEM image and SIMS data [9].…”

“…The details on the implant-induced film-transfer technology for the SiOG substrate appear in the literature by Gadkaree et al [9]. Fig.…”

Silicon-on-Glass (SiOG) substrate technology: Process and materials properties

“…To bond the silicon onto the glass, the two substrates are heated to a temperature below the glass strain point and a voltage is placed across the stack. [2,3] Heating increases the mobility of alkaline earth ions present in the glass, and the electric field induces diffusion of these elements near the glass surface. The result is a strong bond with a unique structure, as described below.…”

Investigation of Ion implantation induced electrically active defects in p-type silicon

“…This is achieved by ion implanting and bonding a semiconducting crystal to an insulating substrate and exfoliating the implanted layer [1,2]. Typically, H 2 or a combination of H 2 and He are employed as the implantation elements used to induce this exfoliation event.…”

“…However, not all SOI processes can tolerate this hightemperature annealing step. SOI structures formed from lowtemperature materials, such as the new Corning Si-on-glass (SiOG) substrate, cannot withstand annealing temperatures in excess of 665ÛC [1,2].…”