Simultaneous Determination of Electron and Hole Mobilities in InP/InGaAsP/InAs/InP Laser Heterostructure by Admittance Spectroscopy

A novel NiO-based p-i-n ultraviolet photodiode

“…In the low applied voltage range (<1.25 V), it shows a p-i-n diode behaviour as deduced from the general diffusion capacitance theory and Shockley's semiconductor theory; the capacitance decreases with reverse bias, while increases with the forward bias. As the forward bias is further increased, the capacitance decreases rapidly to negative values, a phenomenon previously reported in the literature where it is attributed to the emitted carriers from the defect states [31][32][33][34][35][36][37].…”

Dc and ac electrical response of MOCVD grown GaN in p-i-n structure, assessed through I–V and admittance measurement

“…Besides, this approach predicts symmetric dark current-voltage behavior. Luckily, SCLC model incorporating the transit time dispersion seems adequate to resolve such C-log f variation in the present structure [13,15,34]. Therefore,…”

“…The capacitance at lower biases (first region in both forward/reverse direction) was positive for whole scanned frequency interval but at higher biases (the second region in forward direction and third region in reverse direction), the capacitance changed from its geometric value at high frequencies to negative values with decreasing in frequency below 1 kHz. Negative capacitance phenomenon has been displayed over different kind junctions like p-n junction, Schottky diodes, p-i-n junction and light emitting diodes (LED) formed through inorganic and organic materials [13,20,33] such as InGaN/GaN multi quantum wells [3], Au/n-GaN and Pt/n-GaN Schottky diodes [11,34] and a-Si:H based p + -i-n + diodes [16] and finally polymer LED [13,15,[17][18][19]26]. The mechanisms over the negative capacitance in different devices have been attributed to the…”