A novel NiO-based p-i-n ultraviolet photodiode

Sarcan, Fahrettin; Doğan, Ümit; Althumali, Ahmad; Vasili, Hari  B.; Lari, Leonardo; Kerrigan, Adam; Kuruoğlu, Furkan; Lazarov, Vlado K.; Erol, Ayşe

doi:10.1016/j.jallcom.2022.167806

Cited by 9 publications

(4 citation statements)

References 52 publications

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“…It is therefore different from the Tauc gap usually reported [34]. Its value of around 2.1 eV, in the case of the Fe-rich AISI 304 outer layer, and 2.8 eV for the Ni-rich Inconel 600 outer layer differs from the Tauc gap which is around 2.35 eV for Fe2O3 [35] and 3.7 eV for NiO [36].…”

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confidence: 71%

Oxides Film Formed on Fe- and Ni-Based Alloys: An Ellipsometry Insight

et al. 2023

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UV-visible spectroscopic ellipsometry was used to study the thickness and composition of the oxidized zone in Fe- and Ni-based alloys as a function of oxygen partial pressure. In the case of AISI 304 stainless steel, the weathered thickness increases with oxygen partial pressure, whereas in the case of Inconel 600, it appears to be independent of oxygen pressure. This trend is confirmed by the AFM measurements. For both materials studied, the oxygen-modified zone consists of two layers as confirmed by glow discharge optical emission spectrometry (GDOES) measurements. The thicknesses of these two layers vary differently on either side of an oxygen partial pressure of 0.1 Torr. In the case of AISI 304 stainless steel, the thickness of the Fe-rich outer layer decreases in favor of the Cr-rich inner layer. In the case of Inconel 600, the trend is reversed. The Ni-rich outer layer increases significantly above this critical pressure, while the Cr-rich inner layer decreases slightly. The composition of each layer in the oxidized zone is discussed in terms of its dielectric function in relation to reference material. The use of UV-visible ellipsometry as a non-destructive tool to study the structure and composition of the oxide bilayer of absorbing systems such as the alloys under investigation is a first.

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confidence: 71%

Oxides Film Formed on Fe- and Ni-Based Alloys: An Ellipsometry Insight

et al. 2023

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“…The long fluorescence lifetime and high fluorescence efficiency of radiative recombination of CsPbBr 3 was suggested to contribute to this increased long lifetime weight. 55,56 Photodetectors can be clarified into different types according to their work principles, such as photodiodes (PN photodiodes, 57,58 PIN junction photodiodes, 59,60 avalanche photodiodes 61,62 ), and metal-semiconductor-metal photodetectors (MSM-PDs) 63 etc. Depending on the contact type, MSM-PDs can be divided into the ohmic-contact type (photoconductive type) and the Schottky-contact type.…”

Section: Resultsmentioning

confidence: 99%

Phase evolution and fluorescence stability of CsPb₂Br₅ microwires and their application in stable and sensitive photodetectors

Jiang

Wei

et al. 2023

J. Mater. Chem. C

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“…This indicates that the LDR under reverse bias was ten times greater than that under forward bias. Photoconductive responsivity (R ph ) is a critical parameter that gives an indication of how a photodiode responds to incoming light [83,84]. It can simply be defined as the ratio of generated photocurrent to the optical power of the incoming light.…”

Section: Electrical Analysis Of the Ag/mnpc/gc/ag Photodiodementioning

confidence: 99%

Investigation of fundamental electrical and optoelectronic properties of an organic- and carbon-based MnPc/GC photodiode with high photosensitivity

et al. 2023

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The aim of this work is to provide an alternative to optoelectronic devices that use carbon and organic materials. To achieve this, we coated a modified MnPc organic semiconductor compound onto a graphite-like carbon (GC) thin film using the thermal evaporation technique, and fabricated an organic-based, highly light-sensitive MnPc/GC hybrid heterojunction. The heterojunction had a transmittance of approximately 60% in the visible region, an absorption coefficient of ~106 m-1, and an energy band gap of 2.6 eV. Subsequently, Ag contacts were grown on the surface of each layer, and the Ag/MnPc/GC/Ag photodiode was subjected to fundamental electrical analysis at various light intensities and a ±3 V applied potential. Analysis in a dark environment revealed that the photodiode had a rectification ratio of 2.59 x 103, a series resistance of 28 Ω, and a shunt resistance of 4.17 x 104 Ω, as calculated from Ohm's law. The diode ideality factor and barrier height of the photodiode were determined from thermionic emission theory to be 5.60 and 0.71 eV, respectively, and it was observed that these decreased with increasing light intensity. The photodetector parameters of the MnPc/GC hybrid photodiode were determined under positive and negative applied potentials at various light intensities. The highest photocurrent, photoconductive responsivity, photosensitivity, and specific detectivity were determined to be 1.512 x 10-1 A, 11.52 A.W-1, 9.83 x 105, and 2.48 x 1012 Jones, respectively, which were significantly higher than those reported in literature for organic and inorganic-based photodiodes. Based on the findings, it was concluded that the Ag/MnPc/GC/Ag photodiode holds promise as an alternative for sensors, solar cells, photodetectors, and optoelectronic communications applications.

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A novel NiO-based p-i-n ultraviolet photodiode

Cited by 9 publications

References 52 publications

Oxides Film Formed on Fe- and Ni-Based Alloys: An Ellipsometry Insight

Oxides Film Formed on Fe- and Ni-Based Alloys: An Ellipsometry Insight

Phase evolution and fluorescence stability of CsPb₂Br₅ microwires and their application in stable and sensitive photodetectors

Investigation of fundamental electrical and optoelectronic properties of an organic- and carbon-based MnPc/GC photodiode with high photosensitivity

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A novel NiO-based p-i-n ultraviolet photodiode

Cited by 9 publications

References 52 publications

Oxides Film Formed on Fe- and Ni-Based Alloys: An Ellipsometry Insight

Oxides Film Formed on Fe- and Ni-Based Alloys: An Ellipsometry Insight

Phase evolution and fluorescence stability of CsPb2Br5 microwires and their application in stable and sensitive photodetectors

Investigation of fundamental electrical and optoelectronic properties of an organic- and carbon-based MnPc/GC photodiode with high photosensitivity

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Phase evolution and fluorescence stability of CsPb₂Br₅ microwires and their application in stable and sensitive photodetectors