Dc and ac electrical response of MOCVD grown GaN in p-i-n structure, assessed through I–V and admittance measurement

Abstract

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Transport and storage dynamics of 30% In-rich InGaN/GaN MQW LED p–i–n structure

“…For the 3.5-5 V bias range where the light emission begins in the present LED structure; the same process with slightly bigger E A s are obtained. The E A values together with unrealistic ideality factor is signature of a tunneling type conduction mechanism, similar to the GaNbased p-n and p-i-n junctions in the literature [19,[23][24][25][26]. The reported activation energy with tunneling type conduction might describe the barrier of a characteristic defect state in an InGaN/GaN-based MQW LED structure, originated by oxygen impurities, nitrogen vacancies, Mg-H complexes and structural defects arising from the barrier/well interfaces of a MQW/cladding layer due to lattice mismatches.…”

A novel NiO-based p-i-n ultraviolet photodiode

“…The capacitance-voltage (C-V) was plotted under the reverse bias for the different AC frequencies in Figure 4c and supports the Iph trend. The C-V shows a conventional diode characteristic for 1 MHz of AC frequencies, and it slightly decreases over the whole applied voltage range [36,46]. For the low AC frequencies, an increment was observed in the capacitance under the high reverse bias, Region II.…”