Dynamic equivalent circuit modelling of polycrystalline silicon photovoltaic cells

On the Importance of Joint Mitigation Strategies for Front, Bulk, and Rear Recombination in Ultrathin Cu(In,Ga)Se2 Solar Cells

“…As shown in Figure , each electrical component represents a different type of interface and/or property in the solar cell. − Rs represents the solar cell series resistance induced by front and rear contacts. , The space charge region is modeled by C pn and R pn in parallel that represents the p – n junction capacitance and resistance, respectively. , The rear electrical contact is represented by a rear contact capacitance ( C b ) and a rear contact resistance ( R b ) in parallel. , The C i capacitance is in series with the resistance R i ; it represents a measure anomaly in the AC regime, which may be associated with a defect trap level. ,, The i = 1,2 is the representation of different anomalies present in the assigned device. , For each C i – R i connection in series, there is an associated τ i representing a characteristic lifetime. In the case of a trap, it corresponds to the charging/discharging time characteristics of the associated trap level. ,, From the fitted circuits, for the rear passivated devices, we note two branches with a capacitance in series with a resistance: C 1 – R 1 and C 2 – R 2 .…”

Understanding the AC Equivalent Circuit Response of Ultrathin Cu(In,Ga)Se2Solar Cells

“…To evaluate what type of circuit is adequate, we start by testing the fitting of several circuits, which according to the literature [12], [16], [21], [22], [25] carry some physical meaning, and we carefully study the amplitude and phase errors in the entire analyzed frequency spectrum. The most suitable circuit considered by the authors is the one that merges both a low error together with a suitable physical meaning.…”

Improving the Conversion Ratio of QDSCs via the Passivation Effects of NiS

“…[ 47 , 48 ]. The model adopted for the extraction of impedance and the capacitive value are obtained using Equations (5) and (6), which are similar to those in the literature [ 49 , 50 , 51 ]. where are the series resistance of the whole device measured directly from the Nyquist plot, estimated resistances, constant phase element impedance, and Warburg impedance for time-constant regions 1 and 2, as indicated by the Bode plot, respectively.…”