Simulation Study of Germanium p-Type Nanowire Schottky Barrier MOSFETs

Lee, Jae-Hyun; Shin, Mincheol

doi:10.1109/led.2012.2237375

Cited by 6 publications

(2 citation statements)

References 16 publications

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“…Whilst ultra-scaled Silicon based devices are demonstrated both theoretically and experimentally, [3][4] drive current (I DSAT ) saturation and degraded performances of bulk Si CMOSFET limits the prospects of further scaling. Ge offers various advantages over its counterpart Si such as higher injection velocity, higher mobility, higher density-of-states and higher drive current, low contact resistance with metals, low processing temperature for process integration and smaller gate delay [5][6][7][8][9]. Especially when device dimensions shrink below sub 10-nm nodes, the device performances are heavily influenced by quantum confinement effects.…”

Section: Introductionmentioning

confidence: 99%

Investigation of inversion, accumulation and junctionless mode bulk Germanium FinFETs

Thirunavukkarasu

Lee

Sadi

et al. 2017

Superlattices and Microstructures

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The characteristic performance of n-type and p-type inversion (IM) mode, accumulation (AC) mode and junctionless (JL) mode, bulk Germanium FinFET device with 3-nm gate length (L G ) are demonstrated by using 3-D quantum transport device simulation. The simulated bulk Ge FinFET device exhibits favorable short channel characteristics, including drain-induced barrier lowering (DIBL<10mV/V), sub threshold slope (SS~64mV/dec.). Electron density distributions in ON-state and OFFstate also show that the simulated devices have large I ON /I OFF ratios. Homogenous source/drain doping is maintained and only the channel doping is varied among different operating modes. Also, a constant threshold voltage |V TH |~0.31V is maintained. Moreover, the calculated quantum capacitance (C Q ) values of the Ge nanowire emphasizes the importance of quantum confinement effects (QCE) on the performance of the ultra-scaled devices.

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Section: Introductionmentioning

confidence: 99%

Investigation of inversion, accumulation and junctionless mode bulk Germanium FinFETs

Thirunavukkarasu

Lee

Sadi

et al. 2017

Superlattices and Microstructures

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“…Ge SB MOSFET has inherent advantages of metal S/D structure such as low parasitic S/D series resistance, immunity to short channel effects, and reduced process complexity [6À8]. In last decade, Ge p-SB MOSFETs are in consideration by various research groups, which has high drive current as a result of low Schottky barrier height (SBH) for hole, and progress made towards the exploration of device [9,10]. Although, in case of Ge n-SB MOSFET, it is less attractive than the Ge p-SB MOSFETs, because of its higher ambipolar leakage and high SBH for electron injection due to Fermi level pinning at the midgap of semiconductor [11,12].…”

Section: Introductionmentioning

confidence: 99%

Ambipolar Leakage Suppression in Ge n-channel Schottky Barrier MOSFET

Kale

Kondekar

2015

IETE Journal of Research

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This work presents a comprehensive study on ambipolar leakage suppression in Ge n-channel Schottky barrier MOSFETs (Ge n-SB MOSFETs). Also, Fermi level pinning due to metal-induced gap states between the metal contact and semiconductor is another constraint in this device, which restricts the modulation of Schottky barrier height. Here, we effectively suppress the ambipolar leakage by employing underlap gate structure over drain-channel junction, in addition with dopant segregation (DS) to depin the Fermi level. We also investigate the influence of the DS layer doping, thickness, and temperature dependence of ambipolar behaviour using two-dimensional numerical device simulations.

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