Abstract-We investigate the performance of hysteresisfree short-channel negative-capacitance field-effect transistors (NCFETs) by combining quantum mechanical calculations with the Landau-Khalatnikov equation. When the subthreshold swing (SS) becomes smaller than 60 mV/dec, a negative value of draininduced barrier lowering (DIBL) is obtained. This behavior, drain-induced barrier rising (DIBR), causes negative differential resistance (NDR) in the output characteristics of NCFETs. We also examine the performance of an inverter composed of hysteresis-free NCFETs to assess the effects of DIBR at the circuit level. Contrary to our expectation, although hysteresisfree NCFETs are used, hysteresis behavior is observed in the transfer properties of the inverter. Furthermore, it is expected that the NCFET inverter with hysteresis behavior can be used as a Schmitt trigger inverter.Index Terms-Subthreshold swing, ferroelectric, negative capacitance FET, hysteresis behavior, drain-induced barrier lowering, Schmitt trigger inverter
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