Assessing the Performance of Novel Two-Dimensional Materials Transistors: First-Principles Based Approach

Kim, Bokyeom; Seo, Junbeom; Shin, Mincheol

doi:10.1109/ted.2019.2961396

Cited by 6 publications

(3 citation statements)

References 28 publications

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“…Kim et al used a computational simulation workflow which also uses a DFT-NEGF approach to investigate the device performance of double-gated silicene/gallium phosphide heterobilayer FETs [333]. The authors could predict that these FETs have attractive characteristics, such as high ON-state current.…”

Section: D Fetsmentioning

confidence: 99%

Computational perspective on recent advances in quantum electronics: from electron quantum optics to nanoelectronic devices and systems

Weinbub

Kosik

2022

J. Phys.: Condens. Matter

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Quantum electronics has significantly evolved over the last decades. Where initially the clear focus was on light-matter interactions, nowadays approaches based on the electron's wave nature have solidified themselves as additional focus areas. This development is largely driven by continuous advances in electron quantum optics, electron based quantum information processing, electronic materials, and nanoelectronic devices and systems. The pace of research in all of these areas is astonishing and is accompanied by substantial theoretical and experimental advancements. What is particularly exciting is the fact that the computational methods, together with broadly available large-scale computing resources, have matured to such a degree so as to be essential enabling technologies themselves. These methods allow to predict, analyze, and design not only individual physical processes but also entire devices and systems, which would otherwise be very challenging or sometimes even out of reach with conventional experimental capabilities. This review is thus a testament to the increasingly towering importance of computational methods for advancing the expanding field of quantum electronics. To that end, computational aspects of a representative selection of recent research in quantum electronics are highlighted where a major focus is on the electron's wave nature. By categorizing the research into concrete technological applications, researchers and engineers will be able to use this review as a source for inspiration regarding problem-specific computational methods.

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Section: D Fetsmentioning

confidence: 99%

Computational perspective on recent advances in quantum electronics: from electron quantum optics to nanoelectronic devices and systems

Weinbub

Kosik

2022

J. Phys.: Condens. Matter

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“…Although the electrical metal contacts to the X-enes have been reported in the literature [10] [12], the Schottky barrier (SB)-FET based on the 2D mono-elemental X-enes nanoribbon (NR) such as graphene, germanene, phosphorene and the silicene has not been studied. Therefore, the versatile modeling approach along with the high-level description of the device operation is strongly needed to understand the complexity of the physics and the principles related to the X-ene based FETs [13][14] [15]. In most of the reported works the devices have been simulated for analyzing the performance by solving the non-equilibrium Green's function (NEGF) approach along with the tight binding methods.…”

Section: Introductionmentioning

confidence: 99%

Performance Comparison of 2D Mono-Elemental (X-enes) Armchair Nanoribbon Schottky Barrier Field Effect Transistors

Junghare,

Patil

2024

IEEE Trans. Nanotechnology

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In this work, comprehensive analysis of Schottky barrier (SB) field effect transistors (FETs) having 2D mono-elemental (X-enes) nanoribbon (NR) with width of 10 dimers along the armchair direction as a channel material has been carried out. The multiscale approach used for simulating the hydrogen passivated X-ene NR SBFETs consists of density functional theory (DFT), Wannier function based tight binding and the nonequilibrium Green's Function formalism (NEGF). The derived bandgaps for X-enes such as graphene, germanene, phosphorene and silicene are 1.27, 0.379, 1.036 and 0.431 eV respectively. To incorporate the effect of band-bending at the metal-X-ene interface the modification in the conventional multi-scale approach has also been proposed. To mimic the effect of band bending at metal-X-ene interface the schemes proposed in the model are, addition of equivalent channel potential energy in the Hamiltonian matrix and the addition of fixed charges in initial charge profile. Further, the impact of SB width, Fermi level pinning and the scattering on the device performance has also been explored. The results show that the on-state drive current-to-off-state leakage current ratio in the case of graphene and phosphorene SBFETs is up-to the order ~107 whereas for silicene and germanene SBFETs it is in the order of ~103.

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“…DFT Hamiltonians have found increasing use in the nanoelectronics simulations recently. Si nanowire FETs 5,6 and ultra-thin-body FETs, 6 2D material FETs, [7][8][9][10] and resistive memory devices 11 were simulated by importing LCAO DFT Hamiltonians, where LCAO is an abbreviation for linear combinations of atomic orbitals. Si nanowire transistors were also simulated by using the Hamiltonian from the real-space DFT method.…”

Section: Introductionmentioning

confidence: 99%

Hetero-structure Mode Space Method for Efficient Device Simulations

Shin

2021

Preprint

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The Hamiltonian size reduction method or the mode space method applicable to general heterogeneous structures is developed in this work. The effectiveness and accuracy of the method are demonstrated for four example devices of GaSb/InAs tunnel field effect transistor (FET), MoTe 2 /SnS 2 bilayer vertical FET, InAs nanowire FET with a defect, and Si nanowire FET with rough surfaces. The Hamiltonian size is reduced to around 5 % of the original full Hamiltonian size without losing the accuracy of the calculated transmission and local density of states in a practical sense. The method developed in this work can be used with any type of Hamiltonian and can be applied to virtually any heterostructure, so it has the potential to become an enabling technology for efficient simulations of hetero-structures.

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Assessing the Performance of Novel Two-Dimensional Materials Transistors: First-Principles Based Approach

Cited by 6 publications

References 28 publications

Computational perspective on recent advances in quantum electronics: from electron quantum optics to nanoelectronic devices and systems

Computational perspective on recent advances in quantum electronics: from electron quantum optics to nanoelectronic devices and systems

Performance Comparison of 2D Mono-Elemental (X-enes) Armchair Nanoribbon Schottky Barrier Field Effect Transistors

Hetero-structure Mode Space Method for Efficient Device Simulations

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