Ambipolar Leakage Suppression in Ge n-channel Schottky Barrier MOSFET

Kale, Sumit; Kondekar, P. N.

doi:10.1080/03772063.2015.1021387

Cited by 17 publications

(3 citation statements)

References 16 publications

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“…This indicates that the off-state leakage current (∼below 10 −8 A) of the devices in this work is controlled well, but the reason why the higher leakage current of device #3 than that of the other devices is attributed to an increasing hole injection in the OFF state. 24 Further, the on/off-current ratio of each sample can be estimated from the measured I DS -V GS (i.e., device #1 = 2.76 × 10 5 , device #2 = 2.22 × 10 5 , and device #3 = 2.52 × 10 3 ). From the measured I DS 1/2 vs. V GS plot, the threshold voltage (V T ) can be determined using the extrapolation method.…”

Section: Resultsmentioning

confidence: 99%

Impact of Source/Drain Metal Work Function on the Electrical Characteristics of Anatase TiO₂-Based Thin Film Transistors

Choi¹,

Shin²,

Shin³

2017

ECS J. Solid State Sci. Technol.

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Thin film transistors (TFTs) with anatase-TiO2 channel material deposited on an SiO2/Si substrate by atomic layer deposition are fabricated to investigate the effect of the source/drain (S/D) metal work function on the electrical characteristics of the TFTs. S/D materials such as aluminum, silver, and gold are selected for this study. From the measured current-voltage characteristic curves in the dark and at room temperature, it is demonstrated that the anatase TiO2-based TFT with Ag S/D material shows the highest on/off-current ratio (∼ 105), field effect mobility in the saturation regime (μsat = 5.17 cm2V−1s−1), and saturation current (IDS,sat ∼ 0.47 mA).

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Section: Resultsmentioning

confidence: 99%

Impact of Source/Drain Metal Work Function on the Electrical Characteristics of Anatase TiO₂-Based Thin Film Transistors

Choi¹,

Shin²,

Shin³

2017

ECS J. Solid State Sci. Technol.

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“…17 Owing to the nature of ambipolar semiconductors, it is challenging to simultaneously achieve both low leakage currents (off-currents) and enhancement-mode (E-mode) operation, which has limited their widespread adoption in modern microelectronics. 18,19 The device channel with a moderately doped unipolar carrier can be completely depleted by electrostatic control in the gate region of an FET, which does not work for ambipolar semiconductors because both positive and negative bias applied at the gate region increase the concentrations of free (electron or hole) carriers in the channel region. 20 For instance, a unipolar n − -channel layer can be completely depleted by applying a corresponding negative bias at the gate contact of the MESFET.…”

Section: ■ Introductionmentioning

confidence: 99%

Normally Off WSe₂ Nanosheet-Based Field-Effect Transistors with Self-Aligned Contact Doping

Lee

et al. 2022

ACS Appl. Nano Mater.

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Despite the advantages of ambipolar semiconductors, high offcurrents and narrow off-state bias window limit their application in enhancementmode field-effect transistors (FETs). We demonstrate the normally off operation of a low-dimensional ambipolar WSe 2 semiconductor FET by forming the lateral p−n homojunction. The self-aligned n-doping of the ambipolar WSe 2 was obtained by intentionally forming Se vacancy via mild Ar-ion treatment. The UV-ozoneassisted growth of the WO X layer increased the hole concentrations of the WSe 2 channel, where its high work function makes the underlying WSe 2 electrondeficient. A high on/off ratio of ∼10 8 and a wide off-range gate bias with the normally off operation were obtained in the n−p−n nanostructured WSe 2 FETs, which was also characterized by photocurrent mapping analysis. The electrical characteristics of the devices exhibited their thermal stability up to an operating temperature of 140 °C, which was enabled by the formation of the p−n homojunction barrier. High on/off ratios, wide off-range bias, and decent field-effect carrier mobility of the normally off nanosheetbased WSe 2 FET were well maintained at elevated temperatures, which indicates that the low-dimensional ambipolar semiconductor with a junction barrier can play a pivotal role in the next-generation device architecture.

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“…and low Schottky barrier height (SBH) metal silicides (ErSi 2−x , YbSi 2−x , DySi 2−x , and PtSi etc.) [6][7][8]. Recently, effective barrier height engineering using dopant segregation during silicidation has been widely adopted by the various research groups to improve the electrical characteristics of the device [9,10].…”

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confidence: 99%

Design and investigation of double gate Schottky barrier MOSFET using gate engineering

Kale

Kondekar

2015

Micro & Nano Letters

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For the first time, a distinctive approach to design and investigate double-gate Schottky Barrier MOSFET (DG SB-MOSFET) using gate engineering is reported. Three isolated gates (one Control gate and two N-gates) of different work-functions on both sides of the gate oxides have been used. In the proposed device, without the need of doping, n-type region is formed at the source/drain contact-channel interfaces by inducing electron in the ultrathin intrinsic silicon channel using appropriate work-function metal Ngates. Using N-gates, the Schottky barrier height and tunnelling barrier width have been modulated to enhance the carrier injection similar to conventional dopant segregated (DS) SB-MOSFET. Moreover, the proposed DG SB-MOSFET behaves such as a conventional DS SB-MOSFET. The proposed device is expected to be free from variability caused by random dopant fluctuations. Furthermore, it offers simplified process flow with relaxing the need of doping to form dopant segregation layer and increased immunity to device variability.

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Ambipolar Leakage Suppression in Ge n-channel Schottky Barrier MOSFET

Cited by 17 publications

References 16 publications

Impact of Source/Drain Metal Work Function on the Electrical Characteristics of Anatase TiO₂-Based Thin Film Transistors

Impact of Source/Drain Metal Work Function on the Electrical Characteristics of Anatase TiO₂-Based Thin Film Transistors

Normally Off WSe₂ Nanosheet-Based Field-Effect Transistors with Self-Aligned Contact Doping

Design and investigation of double gate Schottky barrier MOSFET using gate engineering

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Ambipolar Leakage Suppression in Ge n-channel Schottky Barrier MOSFET

Cited by 17 publications

References 16 publications

Impact of Source/Drain Metal Work Function on the Electrical Characteristics of Anatase TiO2-Based Thin Film Transistors

Impact of Source/Drain Metal Work Function on the Electrical Characteristics of Anatase TiO2-Based Thin Film Transistors

Normally Off WSe2 Nanosheet-Based Field-Effect Transistors with Self-Aligned Contact Doping

Design and investigation of double gate Schottky barrier MOSFET using gate engineering

Contact Info

Product

Resources

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Impact of Source/Drain Metal Work Function on the Electrical Characteristics of Anatase TiO₂-Based Thin Film Transistors

Impact of Source/Drain Metal Work Function on the Electrical Characteristics of Anatase TiO₂-Based Thin Film Transistors

Normally Off WSe₂ Nanosheet-Based Field-Effect Transistors with Self-Aligned Contact Doping