Design and investigation of double gate Schottky barrier MOSFET using gate engineering

Abstract

For the first time, a distinctive approach to design and investigate double-gate Schottky Barrier MOSFET (DG SB-MOSFET) using gate engineering is reported. Three isolated gates (one Control gate and two N-gates) of different work-functions on both sides of the gate oxides have been used. In the proposed device, without the need of doping, n-type region is formed at the source/drain contact-channel interfaces by inducing electron in the ultrathin intrinsic silicon channel using appropriate work-function metal Ngates. Using N-gates, the Schottky barrier height and tunnelling barrier width have been modulated to enhance the carrier injection similar to conventional dopant segregated (DS) SB-MOSFET. Moreover, the proposed DG SB-MOSFET behaves such as a conventional DS SB-MOSFET. The proposed device is expected to be free from variability caused by random dopant fluctuations. Furthermore, it offers simplified process flow with relaxing the need of doping to form dopant segregation layer and increased immunity to device variability.

Structural Optimized H-Gate High Schottky Barrier Bidirectional Tunnel Field Effect Transistor

“…Therefore, metal material such as Erbium can be selected to form an ErSi interface between the S/D electrodes and the semiconductor region, and the height of SB for electrons in conduction band φ bn for ErSi is much smaller than the one for holes in the valence band φ bp . , Thereafter, compared to the holes flowing from the valence band of the semiconductor into the metal, it is easier for the electrons to flow from the metal into the conduction band of the semiconductor. However, SBs are formed between the source/drain regions and the semiconductor region − and the thermionic emission efficiency is reduced by this SB and is smaller than the case of MOSFETs with a heavily doped source/drain, which has already strengthened the band bending to enhance the intensity of the band to band tunneling effect to reduce the source/drain resistance induced by the SB. For SB-MOSFET, there is no heavily doped source/drain to conquer the SB.…”

A novel high-low-high Schottky barrier based bidirectional tunnel field effect transistor

“…This significantly increases the necessary expenses for production. Comparing to the abrupt junction of MOSFET based on doping technology, Schottky Barrier MOSFET (SB-MOSFET) uses metal materials as the source and drain (S/D) regions of the device [ [6] , [7] , [8] ]. Due to that the enhancement of on state current can be achieved by adopting different alloy electrodes to form Schottky barrier with lower heights [ [9] , [10] , [11] , [12] , [13] ], the Schottky barrier height between the S/D electrodes and the conduction band of semiconductor region (φ Bn ) is usually much lower than that between the S/D electrodes and the valence band (φ Bp ) for n type SB-MOSFET [ 14 ].…”

A highly sensitive vertical plug-in source drain high Schottky barrier bilateral gate controlled bidirectional tunnel field effect transistor

“…However, it is necessary to use expensive millisecond annealing technology to achieve abrupt junctions at the nanometer scale [3]. Schottky barrier MOSFET (SB-MOSFET) forms shallow Schottky barrier instead of the p-n junction barrier of MOSFET [4][5][6]. The metallic source/drain (S/D) architecture holds the advantage to relax severe constraints imposed to conventional implanted S/D [7].…”