Based on the approximated solution of Poisson's equation, we propose a continuous current model of ultra-thin fully depleted cylindrical surrounding-gate Si nanowire MOSFETs. It matches well with three-dimensional simulation results using SILVACO Atlas TCAD in a wide range (from intrinsic to high doping) of the body doping concentration without any empirical fitting parameters. It is valid for all the operation regions such as subthreshold, turn-on, linear and saturation.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.