A novel high-low-high Schottky barrier based bidirectional tunnel field effect transistor

Jin, Xiaoshi; Zhang, Shouqiang; Li, Mengmeng; Liu, Xi; Li, Meng

doi:10.1016/j.heliyon.2023.e13809

Cited by 3 publications

(3 citation statements)

References 16 publications

(16 reference statements)

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“…Because the Schottky barrier height formed between NiSi and semiconductor conduction band is like that formed between NiSi and semiconductor valence band [8]. Similar as the high Schottky barrier based bidirectional tunnel field effect transistor (TFET) [9][10][11][12], by adjusting the voltage of the program gate (PG), the electronhole pairs on the source side in the silicon can be generated through band to band tunneling to overcome the Schottky barrier which prevents the carriers from flowing between the source electrode and the semiconductor region. By adjusting the polarity of the voltage of the PG, the carriers can be controlled to flow in the conduction band or in the valence band of the semiconductor region.…”

Section: Introductionmentioning

confidence: 97%

A Complementary Low Schottky Barrier Nonvolatile Bidirectional Reconfigurable Field Effect Transistor Based on Dual Metal Silicide S/D Contacts

Xi,

Wang,

et al. 2023

IEEE Access

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In this work, a high-performance nanoscale complementary low Schottky barrier (CLSB) nonvolatile bidirectional reconfigurable field effect transistor (NBRFET) based on dual metal silicide source/drain (S/D) contacts (CLSB-NBRFET) is proposed. It is designed with Source floating gate (SFG) and drain floating gate (DFG) and adopts two kinds of metal silicide contacts to form complementary low Schottky barrier both between the S/D electrodes and the conduction band of silicon and between the S/D electrodes and the valence band of silicon at the same time. Instead of a program gate (PG) of conventional BRFET which needs independent power supply, the SFG and DFG of the proposed CLSB-NBRFET can be programmed by the CG itself. Thereafter, the interconnection can be simplified. The nonvolatile reconfigurable function is also realized. The type of charge stored in both SFG, and DFG decides the conduction type of the CLSB-NBRFET. Due to that there is a coupling effect between the effective voltages of SFG /DFG and the control gate (CG) voltage (VCG), the effective voltages of SFG and DFG can be decreased in the reverse biased state, and the reverse leakage current can be reduced. Besides, the dual metal silicide S/D contacts help to largely improve the forward current in both N mode and P mode comparing to conventional BRFET. Therefore, the scale of CLSB-NBRFET simplify the interconnection complexity and improve the characterization of BRFET. The scale of CLSB-NBRFET can be reduced to nanoscale while maintain high performance. The physical mechanism of the proposed CLSB-NBRFET has been analyzed in detail. The device performance has been compared with conventional BRFET. The influence of the amount of charge to the device performance has also been discussed in detail.

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Section: Introductionmentioning

confidence: 97%

A Complementary Low Schottky Barrier Nonvolatile Bidirectional Reconfigurable Field Effect Transistor Based on Dual Metal Silicide S/D Contacts

Xi,

Wang,

et al. 2023

IEEE Access

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“…To avoid doping process in TFET, doping-less tunnel FET or charge plasma based nanowire TFET are proposed [19][20][21][22][23]. For bidirectional operation, a bidirectional tunneling field effect transistor (BTFET) based on high Schottky barrier (HSB) such as HSB-BTFET and A novel high-low-high Schottky barrier based bidirectional tunnel field effect transistor (HLHSB-BTFET) [24,25]. However, due to that band-toband tunneling is the main current generation mechanism of HSB-BTFET or HLHSB-BTFET, similar as other type of TFETs, high source-drain impedance is formed, and the forward ONstate current driving ability is seriously limited.…”

Section: Introductionmentioning

confidence: 99%

A highly sensitive vertical plug-in source drain high Schottky barrier bilateral gate controlled bidirectional tunnel field effect transistor

Liu

et al. 2023

PLoS ONE

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In this article, we propose a highly sensitive vertically plug-in source drain contacts high Schottky barrier based bilateral gate and assistant gate controlled bidirectional tunnel field Effect transistor (VPISDC-HSB-BTFET). It can achieve much more sensitive forward current driving ability than the previously proposed High Schottky barrier source/drain contacts based bilateral gate and assistant Gate controlled bidirectional tunnel field Effect transistor (HSB-BTFET). Silicon body of the proposed VPISDC-HSB-BTFET is etched into a U-shaped structure. By etching both sides of the silicon body to form vertically plug-in source drain contacts, the source and drain electrodes are plugged into a certain height of the vertical parts of both sides of the U-shaped silicon body. Thereafter, the efficient area of the band-to-band tunneling generation region near the source drain contacts is significantly increased, so as to achieve sensitive ON-state current driving ability. Comparing to the mainstream FinFET technology, lower subthreshold swing, lower static power consumption and Higher Ion−Ioff ratio can be achieved.

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“…The study highlighted the challenges posed by symmetric structures, which can exacerbate ambipolar effects. X. Jin explored a symmetry high-low–high Schottky barrier-based bidirectional TFET [ 24 ]. Their work emphasized the impact of gate-source line tunneling on device performance.…”

Section: Introductionmentioning

confidence: 99%

Enhancing subthreshold slope and ON-current in a simple iTFET with overlapping gate on source-contact, drain Schottky contact, and intrinsic SiGe-pocket

Lin,

Cheng

2023

Discover Nano

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In this paper, we present a new novel simple iTFET with overlapping gate on source-contact (SGO), Drain Schottky Contact, and intrinsic SiGe pocket (Pocket-SGO iTFET). The aim is to achieve steep subthreshold swing (S.S) and high ION current. By optimizing the gate and source-contact overlap, the tunneling efficiency is significantly enhanced, while the ambipolar effect is suppressed. Additionally, using a Schottky contact at the drain/source, instead of ion implantation drain/source, reduces leakage current and thermal budget. Moreover, the tunneling region is replaced by an intrinsic SiGe pocket posing a narrower bandgap, which increases the probability of band-to-band tunneling and enhances the ION current. Our simulations are based on the feasibility of the actual process, thorough Sentaurus TCAD simulations demonstrate that the Pocket-SGO iTFET exhibits an average and minimum subthreshold swing of S.Savg = 16.2 mV/Dec and S.Smin = 4.62 mV/Dec, respectively. At VD = 0.2 V, the ION current is 1.81 $$\times$$ × 10–6 A/μm, and the ION/IOFF ratio is 1.34 $$\times$$ × 109. The Pocket-SGO iTFET design shows great potential for ultra-low-power devices that are required for the Internet of Things (IoT) and AI applications.

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A novel high-low-high Schottky barrier based bidirectional tunnel field effect transistor

Cited by 3 publications

References 16 publications

A Complementary Low Schottky Barrier Nonvolatile Bidirectional Reconfigurable Field Effect Transistor Based on Dual Metal Silicide S/D Contacts

A Complementary Low Schottky Barrier Nonvolatile Bidirectional Reconfigurable Field Effect Transistor Based on Dual Metal Silicide S/D Contacts

A highly sensitive vertical plug-in source drain high Schottky barrier bilateral gate controlled bidirectional tunnel field effect transistor

Enhancing subthreshold slope and ON-current in a simple iTFET with overlapping gate on source-contact, drain Schottky contact, and intrinsic SiGe-pocket

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