A Complementary Low Schottky Barrier Nonvolatile Bidirectional Reconfigurable Field Effect Transistor Based on Dual Metal Silicide S/D Contacts
Liu Xi,
Ya Wang,
Meile Wu
et al.
Abstract:In this work, a high-performance nanoscale complementary low Schottky barrier (CLSB) nonvolatile bidirectional reconfigurable field effect transistor (NBRFET) based on dual metal silicide source/drain (S/D) contacts (CLSB-NBRFET) is proposed. It is designed with Source floating gate (SFG) and drain floating gate (DFG) and adopts two kinds of metal silicide contacts to form complementary low Schottky barrier both between the S/D electrodes and the conduction band of silicon and between the S/D electrodes and th… Show more
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