Simulation of SiC deposition from SiH4/C3H8/Ar/H2 mixtures in a cold-wall CVD reactor

Organosilicon Polymers Deposition by PECVD and RPECVD on Micropatterned Substrates

“…[16] The simulation tools were developed for etching purposes through 2D-and 3D-models. [5,17] To the best of our knowledge, however, only a small amount of literature regarding the modeling of the growth of organosilicon polymer films [18][19][20] can be found, due to the lack of experimental data on the chemistry of such complex media. Nevertheless, a number of works deal with trench filling and conformality in the case of plasma polymer deposits.…”

Argon/tetramethysilane PECVD: From process diagnostic and modeling to a-Si:C:H hard coating composition

“…At this preliminary stage, most rate coefficients were roughly estimated. Saturated molecular species in their ground state were considered unreactive towards the surface, except C 2 H 2 and C 2 H 4 for which sticking coefficients of 2.10 − 3 were used [18]. Sticking coefficients of one were assumed for other radical species.…”

An integrated model for halide chemical vapor deposition of silicon carbide epitaxial films

“…Recently, SiC has also found important applications in microeletro-mechanical systems because of its superior thermal, mechanical, and chemical properties [2,3]. Currently, the most extensively employed technique for growing SiC epitaxial layers is chemical vapor deposition (CVD) method using silane (SiH 4 ) and propane (C 3 H 8 ) highly diluted in hydrogen (H 2 ) as precursors [4][5][6][7][8][9]. However, this method is not economically suitable for applications requiring thick SiC epilayers (4100 mm) due to its low deposition rate (3-15 mm/h).…”

“…While the chemical reaction mechanism and deposition process of SiC using SiH 4 /C 3 H 8 /H 2 mixture has been widely studied [5,8,9], numerical study of SiC HCVD at high deposition temperatures (41400 1C) is quite limited. Nigam et al [11] studied the deposition kinetics in a Si/Cl/C/H system based on their film deposition experiment and thermodynamic equilibrium analysis.…”