An integrated model for halide chemical vapor deposition of silicon carbide epitaxial films

Wang, Rong; Ma, Ronghui

doi:10.1016/j.jcrysgro.2008.06.060

Cited by 8 publications

(23 citation statements)

References 20 publications

(56 reference statements)

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“…HCl becomes the most abundant Si/Cl contained intermediate when the ratio of MTS/H 2 decrease to 1.5%. Researchers [12,31,32] pointed out that HCl highly affects the growth rate and is involved in the deposition because of its etching effect on SiC film. It implies that HCl has a greater effect on the growth rate at low MTS/H 2 ratio in case 5 and case 6 than at high MTS/H 2 ratio in case 3 and case 4.…”

Section: Resultsmentioning

confidence: 99%

Numerical Simulation of Gas Phase Reaction for Epitaxial Chemical Vapor Deposition of Silicon Carbide by Methyltrichlorosilane in Horizontal Hot-Wall Reactor

et al. 2021

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Methyltrichlorosilane (CH3SiCl3, MTS) has good performance in stoichiometric silicon carbide (SiC) deposition and can be facilitated at relatively lower temperature. Simulations of the chemical vapor deposition in the two-dimensional horizontal hot-wall reactor for epitaxial processes of SiC, which were prepared from MTS-H2 gaseous system, were performed in this work by using the finite element method. The chemistry kinetic model of gas-phase reactions employed in this work was proposed by other researchers. The total gas flow rate, temperature, and ratio of MTS/H2 were the main process parameters in this work, and their effects on consumption rate of MTS, molar fraction of intermediate species and C/Si ratio inside the hot reaction chamber were analyzed in detail. The phenomena of our simulations are interesting. Both low total gas flow rate and high substrate temperature have obvious effectiveness on increasing the consumption rate of MTS. For all cases, the highest three C contained intermediates are CH4, C2H4 and C2H2, respectively, while the highest three Si/Cl contained intermediates are SiCl2, SiCl4 and HCl, respectively. Furthermore, low total gas flow results in a uniform C/Si ratio at different temperatures, and reducing the ratio of MTS/H2 is an interesting way to raise the C/Si ratio in the reactor.

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Section: Resultsmentioning

confidence: 99%

Numerical Simulation of Gas Phase Reaction for Epitaxial Chemical Vapor Deposition of Silicon Carbide by Methyltrichlorosilane in Horizontal Hot-Wall Reactor

et al. 2021

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“…SiH 4 -C 3 H 8 -H 2 gaseous system was widely used in CVD process of SiC [ 13 , 14 , 15 ], in which silane (SiH 4 ) and propane (C 3 H 8 ) as precursors, while hydrogen (H 2 ) as carrier gas. Halide contained precursors have become preferred because the addition of halogen can modify the CVD process for growing SiC epitaxial layer at relatively high deposition rates [ 16 , 17 , 18 , 19 , 20 , 21 ]. The chlorinated compounds, available in high purity at low cost [ 22 ], are appropriate for SiC epitaxial process.…”

Section: Introductionmentioning

confidence: 99%

“…With the addition of HCl as a precursor is a viable approach [ 22 , 23 , 24 ]. Chlorinated Si-containing compounds such as SiHCl 3 and SiCl 4 [ 19 , 25 ] also can be used as precursors.…”

Section: Introductionmentioning

confidence: 99%

Surface Kinetic Mechanisms of Epitaxial Chemical Vapour Deposition of 4H Silicon Carbide Growth by Methyltrichlorosilane-H2 Gaseous System

et al. 2022

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The chemical vapour deposition (CVD) technique could be used to fabricate a silicon carbide (SiC) epitaxial layer. Methyltrichlorosilane (CH3SiCl3, MTS) is widely used as a precursor for CVD of SiC with a wide range of allowable deposition temperatures. Typically, an appropriate model for the CVD process involves kinetic mechanisms of both gas-phase reactions and surface reactions. Here, we proposed the surface kinetic mechanisms of epitaxial SiC growth for MTS-H2 gaseous system where the MTS employed as the single precursor diluted in H2. The deposition face is assumed to be the Si face with a surface site terminated by an open site or H atom. The kinetic mechanisms for surface reactions proposed in this work for MTS-H2 gaseous system of epitaxial growth of SiC by CVD technique from mechanisms proposed for H-Si-C-Cl system are discussed in detail. Predicted components of surface species and growth rates at different mechanisms are discussed in detail.

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“…Further advancement of this technology requires deposition of films on large area substrates with good uniformity, low defect densities, and desired properties. Numerical modeling has been widely exploited as an expedient method for test, design, and optimization of reactor geometry and process conditions for a variety of vapor deposition processes. − An essential part in the numerical study of vapor deposition is the gas-phase and surface chemistry because it has profound impact on film deposition rate and characteristics of as-grown films. − When integrated with a transport model for gas flow, heat transfer, and transfer of multiple chemical species, it allows one to predict the film deposition rate and uniformity. − Veneroni et al − investigated the kinetics of gas-phase reactions and surface kinetics with SiHCl 3 , SiH 3 Cl 2 , and SiCl 3 CH 3 as the precursors. They developed a reaction mechanism with 76 surface reactions and modeled the deposition process using a one-dimensional boundary layer model.…”

Section: Introductionmentioning

confidence: 99%

“…Wang et al proposed a reaction mechanism for HCVD with silicon tetrachloride and propane (SiCl 4 /C 3 H 8 ) as precursors. This mechanism was used in a two-dimensional (2D) axisymmetric model for SiC HCVD in a horizontal hot-wall reactor. , The simulation results provided quantitative information on the chemical composition of the gas mixture and the deposition rates for various combinations of the precursor flow rates and deposition temperatures. A parametric study of the deposition process suggests that etching of SiC by HCl is the main reason for the reduced deposition rates at elevated temperatures.…”

Section: Introductionmentioning

confidence: 99%

Reduction of Chemical Reaction Mechanism for Halide-Assisted Silicon Carbide Epitaxial Film Deposition

Wang

Dudley

2009

Ind. Eng. Chem. Res.

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Simulation of gas-phase and surface chemistry is an essential part in numerical study of chemical vapor deposition for film growth. When integrated with a model for transport processes such as gas flow, heat transfer, and mass transfer, it allows the prediction of gas-phase composition, film deposition rate, and film uniformity. For halide-assisted chemical vapor deposition of silicon carbide film growth, three-dimensional simulation of the deposition process can be time-consuming due to the large number of chemical reactions involved. In this study, a simplified chemical reaction mechanism was developed for silicon carbide growth with silicon tetrachloride and propane as precursors. After model validation, the reduced reaction steps were implemented into a three-dimensional simulation of halide-assisted chemical vapor deposition to predict the distributions of gas velocity, temperature, concentration of the intermediate reactants, and film deposition rate. Specifically, the effects of deposition pressure on the film growth were investigated. The integrated model for chemistry and transport process demonstrated the capability of modeling a deposition process with reasonable computing time. We envision that this model will provide a useful tool for design, test, and optimization of the deposition process for growing silicon carbide films or bulk crystals by use of halide-assisted chemical vapor deposition process.

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An integrated model for halide chemical vapor deposition of silicon carbide epitaxial films

Cited by 8 publications

References 20 publications

Numerical Simulation of Gas Phase Reaction for Epitaxial Chemical Vapor Deposition of Silicon Carbide by Methyltrichlorosilane in Horizontal Hot-Wall Reactor

Numerical Simulation of Gas Phase Reaction for Epitaxial Chemical Vapor Deposition of Silicon Carbide by Methyltrichlorosilane in Horizontal Hot-Wall Reactor

Surface Kinetic Mechanisms of Epitaxial Chemical Vapour Deposition of 4H Silicon Carbide Growth by Methyltrichlorosilane-H2 Gaseous System

Reduction of Chemical Reaction Mechanism for Halide-Assisted Silicon Carbide Epitaxial Film Deposition

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