Surface Kinetic Mechanisms of Epitaxial Chemical Vapour Deposition of 4H Silicon Carbide Growth by Methyltrichlorosilane-H2 Gaseous System

Abstract

The chemical vapour deposition (CVD) technique could be used to fabricate a silicon carbide (SiC) epitaxial layer. Methyltrichlorosilane (CH3SiCl3, MTS) is widely used as a precursor for CVD of SiC with a wide range of allowable deposition temperatures. Typically, an appropriate model for the CVD process involves kinetic mechanisms of both gas-phase reactions and surface reactions. Here, we proposed the surface kinetic mechanisms of epitaxial SiC growth for MTS-H2 gaseous system where the MTS employed as the single precursor diluted in H2. The deposition face is assumed to be the Si face with a surface site terminated by an open site or H atom. The kinetic mechanisms for surface reactions proposed in this work for MTS-H2 gaseous system of epitaxial growth of SiC by CVD technique from mechanisms proposed for H-Si-C-Cl system are discussed in detail. Predicted components of surface species and growth rates at different mechanisms are discussed in detail.

Recent Progress in Heat and Mass Transfer Modeling for Chemical Vapor Deposition Processes

“…Song et al propose surface kinetic mechanisms for the epitaxial growth of SiC using methyltrichlorosilane (MTS) in a hydrogen environment, discussing the components of surface species and growth rates under different mechanisms [135].…”

“…Growth by Methyltrichlorosilane-H₂ Gaseous System [135] The article provides an in-depth analysis of the kinetic mechanisms at play during the CVD process. By dissecting both gas-phase and surface reactions, it offers a granular understanding of the factors influencing SiC growth, which is crucial for optimizing deposition conditions.…”

Role of Different Catalysts on a Direct Growth Carbon Nanotube for Supercapacitor Electrodes

“…Either hydrogen or nitrogen gases are used to react at the surface and to maintain the high temperature and pressure of the substrate. 16,17 Precursor gases such as carbon monoxide, ethane, ethylene, acetylene, benzene, and xylene mostly contain carbon sources. Methane, ethylene, and acetylene have linear dimmers of carbon atoms and they form a straight CNT, while benzene produces a curved CNT.…”

“…Under vacuum conditions, argon is used to create the inert gas atmosphere and purge any additional contaminants in the substrate. Either hydrogen or nitrogen gases are used to react at the surface and to maintain the high temperature and pressure of the substrate. , Precursor gases such as carbon monoxide, ethane, ethylene, acetylene, benzene, and xylene mostly contain carbon sources. Methane, ethylene, and acetylene have linear dimmers of carbon atoms and they form a straight CNT, while benzene produces a curved CNT. , Acetylene has a major influence on CNT production manufactured by the CVD method.…”