a‐SiC:H films prepared by plasma‐assisted chemical vapor deposition (PACVD) are good candidates for mechanical applications as they present high hardness (H) and Young's modulus (E) as well as good resistance to wear and friction. In this work, a‐SiC:H coatings are grown from argon/tetramethylsilane [TMS: Si(CH3)4] gas mixtures in a low frequency PACVD device. The present paper is devoted to the diagnosis of the plasma discharge and aims at establishing correlations between the nature and densities of gaseous chemical species observed near the growing film surface and the corresponding material characteristics. Chemical species produced from the dissociation of the TMS precursor through SiC and CH bond breaking have been identified by performing MS measurements, which have been found consistent with our first process simulation results. Plasma power and gas mean residence time in the reactor appear to be the most influential factors. Si(CH3)3, Si(CH3)2, then SiCH3 densities increase gradually with increasing plasma power, giving rise to CC bond carriers such as C2H4, C2H2, and C2H6, and lighter species such as CH2, CH3, CH4, H, and H2. The chemical nature of the plasma is compared to the corresponding film composition characterized by X‐ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIR), and energy dispersive spectroscopy (EDS). Film hardness and Young's modulus can be adjusted in the range [20 < H < 30 GPa, 150 < E < 225 GPa] and a friction coefficient (µ) versus steel as low as 0.16 can be obtained.