Simulated exposure of titanium dioxide memristors to ion beams

Abstract

The effects of exposing titanium dioxide memristors to ion beams are investigated through Monte Carlo simulation of particle transport. A model assuming ohmic electronic conduction and linear ionic drift in the memristor is utilized. The memristor is composed of a double-layer titanium dioxide thin film between two platinum electrodes. Obtained results suggest that a significant generation of oxygen ion/oxygen vacancy pairs in the oxide is to be expected along ion tracks. These can influence the device’s operation by lowering the resistance of the stoichiometric oxide region and the mobility of the vacancies. Changes induced by ion irradiation affect the current-voltage characteristic and state retention ability of the memristor. If the displaced oxygen ions reach the platinum electrodes, they can form the O2 gas and cause a permanent disruption of memristor functionality

Influence of electromagnetic and nuclear radiation in medicine for therapy and diagnosis through processes, facts and statistical analysis

“…World ca tas tro phes such as Chernobyl, ac ci dents, Three Miles Is land, Fukushima, pro voke dis cus sions about doses, caused bi o log i cal ef fects of ra di a tion and ge net ics (early and late ef fects). Un for tu nately, new facts are pro vided through ac ci dents in nu clear and laser tech nol o gies [2][3][4][5][6][7][8][9][10][11][12][13][14]. In tab.…”

“…1 the lev els of radiobiological pro cesses [9][10][11][12][13] are pre sented. Bi o logi cal en ti ties and hard ness of or ganic/in or ganic ma te ri als and sys tems are con nected with doses with ap pro pri ate def i ni tion, mea sure ments, un cer tain ties, as well as bi olog i cal ra di a tion ef fects [2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17]. Many the o ret i cal models on var i ous or ga ni za tion lev els are de vel oped.…”

Overview of radiation effects on emerging non-volatile memory technologies

“…Monte Carlo sim u la tions of pro ton ir ra di a tion on phase change mem ory cells were con ducted and the pro ton dose, in both the whole mem ory cell and in its ac tive layer, was cal cu lated in [39]. This type of approach in in ves ti gat ing ra di a tion ef fects is valu able since it al lows the as sess ment of the pro ton dose and the over view of ra di a tion ef fects in lay ers of in ter ests for re al is tic pro ton fluences, whereas ac tual ex per i -ments can hardly sep a rate the in flu ence of ra di a tion on the PCM cell alone with out in clud ing the ef fects on pe riph eral cir cuits [40]. The mem ory cell was modeled by a multi-layer stack con sist ing of two TiW electrodes and ZnS-SiO 2 films as in su la tors.…”

Monte-Carlo simulation of radiation impact on flash memory cells

“…Flash memory takes a considerable level of solar cell control in space flights, because they are the main components of devices which manage all operations of solar cells in the space. In this way, the flash memory devices are under the influence of light ions (intense primary cosmic radiation), so the prediction of their applicability is the principal assignment of this research [8,12].…”